The preparation of GaAs nanowire templates with the cost-effective electrochemical etching of (001) and (111)B GaAs substrates in a 1 M HNO₃ electrolyte is reported. The electrochemical etching resulted in the obtaining of GaAs nanowires with both perpendicular and parallel orientations with respect to the wafer surface. Core–shell GaAs-Fe nanowire arrays have been prepared by galvanostatic Fe deposition into these templates. The fabricated arrays have been investigated by means of scanning electron microscopy (SEM) and vibrating sample magnetometry (VSM). The magnetic properties of the polycrystalline Fe nanotubes constituting the shells of the cylindrical structures, such as the saturation and remanence moment, squareness ratio, and coercivity, were analyzed in relation to previously reported data on ferromagnetic nanowires and nanotubes.

A series of Zn_1−xMg_xO thin films with x ranging from 0 to 0.8 were prepared by spin coating and aerosol spray pyrolysis deposition on Si and quartz substrates. The morphology, composition, nano-crystalline structure, and optical and vibration properties of the prepared films were studied using scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD), and optical and Raman scattering spectroscopy. The optimum conditions of the thermal treatment of samples prepared by spin coating were determined from the point of view of film crystallinity. The content of crystalline phases in films and values of the optical band gap of these phases were determined as a function of the chemical composition. We developed heterostructure photodetectors based on the prepared films and demonstrated their operation in the injection photodiode mode at forward biases. A device design based on two Zn_1−xMg_xO thin films with different x values was proposed for extending the operational forward bias range and improving its responsivity, detectivity, and selectivity to UV radiation.

A series of Zn_1−xMg_xO thin films with the composition range x = 0.00–0.40 has been prepared by sol–gel spin coating on Si substrates with a post-deposition thermal treatment in the temperature range of 400–650 °C. The morphology of the films was investigated by scanning electron microscopy and atomic force microscopy while their light emission properties were studied by photoluminescence spectroscopy under excitation at 325 nm. It was found that annealing at 500 °C leads to the production of macroscopically homogeneous wurtzite phase films, while thermal treatment at higher or lower temperature results in the degradation of the morphology, or in the formation of ZnO particles embedded into the ZnMgO matrix, respectively. Local compositional fluctuations leading to the formation of deep band tails in the gap were deduced from photoluminescence spectra. A model for the band tail distribution in the bandgap is proposed as a function of the alloy composition. Thin films were also prepared by aerosol spray pyrolysis deposition using the same sol–gel precursors for the purpose of comparison. The prepared films were tested for photodetector applications.

Uniform nanogranular NiFe layers with Ni contents of 65%, 80%, and 100% have been electroplated in the potentiostatic deposition mode on both planar substrates and arrays of nanowires prepared by the anodization of GaAs substrates. The fabricated planar and coaxial core-shell ferromagnetic structures have been investigated by means of scanning electron microscopy (SEM) and vibrating sample magnetometry (VSM). To determine the perspectives for applications, a comparative analysis of magnetic properties, in terms of the saturation and remanence moment, the squareness ratio, and the coercivity, was performed for structures with different Ni contents.

GaAs nanowire arrays have been prepared by anodization of GaAs substrates. The nanowires produced on (111)B GaAs substrates were found to be oriented predominantly perpendicular to the substrate surface. The prepared nanowire arrays have been coated with thin ZnO or TiO₂ layers by means of thermal atomic layer deposition (ALD), thus coaxial core–shell hybrid structures are being fabricated. The hybrid structures have been characterized by scanning electron microscopy (SEM) for the morphology investigations, by Energy Dispersive X-ray (EDX) and X-ray diffraction (XRD) analysis for the composition and crystal structure assessment, and by photoluminescence (PL) spectroscopy for obtaining an insight on emission polarization related to different recombination channels in the prepared core–shell structures.

The interrelationships between the topological features, such as surface roughness deduced from atomic force microscopy (AFM), and wettability properties expressed by the contact angle of a water droplet on the surface of nanostructured wide bandgap oxide films prepared by spray pyrolysis are investigated for a wide range of compositions. A direct relationship between the surface roughness and the value of the contact angle was found for nanocomposite (In₂O₃)_1−x(MgO)_x, (In_1−xGa_x)₂O₃, and Zn_1−xMg_xO films, for which both the surface roughness and the contact angle increase with the increasing x-value. On the other hand, in ITO films doped with Ga, it was found that the surface roughness increases by increasing the Ga doping, while the contact angle decreases. Both the surface roughness and the contact angle proved to increase in Ga₂O₃ films when they were alloyed with Al₂O₃, similar to other nanocomposite films. An inverse relationship was revealed for a nanocomposite formed from Ga₂O₃ and SnO₂. The contact angle for a (Ga₂O₃)_0.75(SnO₂)_0.25 film was larger as compared to that of the Ga₂O₃ film, while the surface roughness was lower, similar to ITO films. The highest value of the contact angle equal to 128° was found for a (In₂O₃)_1−x(MgO)_x film with an x-value of 0.8, and the largest RMS roughness of 20 nm was showed by a Ga_1.75Al_0.25O₃ film. The optical properties of the prepared films were also analyzed from optical absorption spectroscopy, demonstrating their bandgap variation in the range of (4 to 4.85) eV, corresponding to the middle ultraviolet spectral range.