This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the piezoresistor are evaluated. By optimizing the process, the realization of the pressure sensing diaphragm with a controllable thickness is achieved, and good ohmic contact is ensured. To obtain higher sensitivity and high temperature stability, an SOI structure with a 1.5 µm ultra-thin monocrystalline silicon layer is used in device manufacturing. The device diaphragm size is 700 µm × 700 µm × 2.1 µm. The experimental results show that the fabricated piezoresistive pressure sensor has a high sensitivity of 2.255 mV/V/kPa and a sensing resolution of less than 100 Pa at room temperature. The sensor has a temperature coefficient of sensitivity (TCS) of −0.221 %FS/°C and a temperature coefficient of offset (TCO) of −0.209 %FS/°C at operating temperatures ranging from 20 °C to 160 °C. The reported piezoresistive microelectromechanical systems (MEMS) pressure sensors are fabricated on 8-inch wafers using standard CMOS-compatible processes, which provides a volume solution for embedded integrated precision detection applications of air pressure, offering better insights for high-temperature and miniaturized low-pressure sensor research.

Piezoelectric micromachined ultrasonic transducers (PMUTs) have been widely applied in distance sensing. However, the sensing distance of currently reported miniaturized ultrasonic sensors (e.g., PMUTs or CMUT) is still limited up to a certain range (e.g., ≤5 m) compared to conventional bulk ultrasonic devices. This paper reports a PMUT array design using scandium-doped aluminum nitride (AlScN) as its piezoelectric layer for an extended long-range detection purpose. To minimize air attenuation, our device is resonating at 66 kHz for a high receive sensitivity of 5.7 mV/Pa. The proposed PMUT array can generate a sound pressure level (SPL) as high as 120 dB at a distance of 10 cm without beam forming. This PMUT design is catered for a pin-to-pin replacement of the current commercial bulk ultrasonic ranging sensor and works directly with the conventional range finding system (e.g., TI PGA460). In comparison with the common bulk transducer, the size of our device is 80% smaller. With the identical ranging detection setup, the proposed PMUT array improves the system SNR by more than 5 dB even at a distance as far as 6.8 m. The result of extended sensing distance validates our miniaturized PMUT array as the optimized candidate for most ultrasonic ranging applications. With the progressive development of piezoelectric MEMS, we believe that the PMUT technology could be a game changer in future long-range sensing applications.

This paper presents a novel bimorph Piezoelectric Micromachined Ultrasonic Transducer (PMUT) fabricated with 8-inch standard CMOS-compatible processes. The bimorph structure consists of two layers of 20% scandium-doped aluminum nitride (Sc_0.2Al_0.8N) thin films, which are sandwiched among three molybdenum (Mo) layers. All three Mo layers are segmented to form the outer ring and inner plate electrodes. Both top and bottom electrodes on the outer ring are electrically linked to the center inner plate electrodes. Likewise, the top and bottom center plate electrodes are electrically connected to the outer ring in the same fashion. This electrical configuration maximizes the effective area of the given PMUT design and improves efficiency during the electromechanical coupling process. In addition, the proposed bimorph structure further simplifies the device’s electrical layout with only two-terminal connections as reported in many conventional unimorph PMUTs. The mechanical and acoustic measurements are conducted to verify the device’s performance improvement. The dynamic mechanical displacement and acoustic output under a low driving voltage (1 Vpp) are more than twice that reported from conventional unimorph devices with a similar resonant frequency. Moreover, the pulse-echo experiments indicate an improved receiving voltage of 10 mV in comparison with the unimorph counterpart (4.8 mV). The validation of device advancement in the electromechanical coupling effect by using highly doped ScAlN thin film, the realization of the proposed bimorph PMUT on an 8-inch wafer paves the path to production of next generation, high-performance piezoelectric MEMS.

Compared to conventional ultrasonic flowmeters using multiple transducers, this paper reports, for the first time, an airflow volumetric flowmeter using a signal PMUT array to measure the flow rate in a rectangular pipe. The PMUT around 200 kHz is selected to fit the system requirements. All PMUT elements on this single array are then electrically grouped into transmitter and receiver. In order to minimize the crosstalk signal between transmitter and receiver, a phase shift signal is applied at the transmitter to reduce the amplitude of the crosstalk signal by 87.8%, hence, the resultant high sensing resolution. Based on the analog signal extracted from the single PMUT array, a complete flow sensing system is built by using the cross-correlation method and cosine interpolation, whereby the change in flow rate is reflected by the time of flight difference (dTof) recorded at the receiver. Meanwhile, the acoustic path self-calibration is realized by using multiple echoes. Compared with the previously reported MEMS flowmeters with dual or multiple PMUT devices, this paper proposes a single PMUT array flow sensing system, which is able to measure the flow rate changes up to 4 m³/h. With the implementation of a single device, the problem of ultrasound device/reflector misalignment during system setup is completely eradicated.

Al $_{\mathrm{1-x}}$ Sc $_{\mathrm{x}}$ N has much higher piezoelectric coefficient compared with traditional AlN, thus is promising to be used in piezoelectric micro machined ultrasonic transducer (pMUT). However, high doping of Sc introduces the precipitation of the Sc at the grain boundaries, which makes it difficult to prepare AlScN membranes with good piezoelectric performance. This paper reports a method fabricating AlScN composite membranes on the 8-inch wafer. Sc with content of 20% and 9.6% are separately doped in the top and bottom of the composite membrane. The hybrid membrane shows better surface morphology and less Sc precipitations compared with pure Al $_{0.8}$ Sc $_{0.2}$ N film. Meanwhile, the process of the hybrid membrane is compatible with CMOS and facilitates the batch process. The pMUT prepared by the membrane has high k $_{\mathrm{t}}^{2}$ of 2.9%, which is about twice as large as that of pMUT made by Al $_{0.904}$ Sc $_{0.096}$ N (1.5%). The proposed hybrid-morph structure with highly doped AlScN thin film contributes a novel solution to new generation of high-quality film for both research and commercial application. 2022-0141