Magnetic functional heterojunction reactors, containing a 3D specific recognition layer and TiO₂–POPD heterojunction, improve the selectivity and photocatalytic activity.

We report a breakthrough in the hardware implementation of energy-efficient all-spin synapse and neuron devices for highly scalable integrated neuromorphic circuits. Our work demonstrates the successful execution of all-spin synapse and activation function generator using domain wall-magnetic tunnel junctions. By harnessing the synergistic effects of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in selectively etched spin-orbit coupling layers, we achieve a programmable multi-state synaptic device with high reliability. Our first-principles calculations confirm that the reduced atomic distance between 5dand 3datoms enhances Dzyaloshinskii-Moriya interaction, leading to stable domain wall pinning. Our experimental results, supported by visualizing energy landscapes and theoretical simulations, validate the proposed mechanism. Furthermore, we demonstrate a spin-neuron with a sigmoidal activation function, enabling high operation frequency up to 20 MHz and low energy consumption of 508 fJ/operation. A neuron circuit design with a compact sigmoidal cell area and low power consumption is also presented, along with corroborated experimental implementation. Our findings highlight the great potential of domain wall-magnetic tunnel junctions in the development of all-spin neuromorphic computing hardware, offering exciting possibilities for energy-efficient and scalable neural network architectures.

In this work, we report the enhanced catalytic reduction of 4-nitrophenol driven by Fe₃O₄-Au magnetic nanocomposite interface engineering. A facile solvothermal method is employed for Fe₃O₄ hollow microspheres and Fe₃O₄-Au magnetic nanocomposite synthesis via a seed deposition process. Complementary structural, chemical composition and valence state studies validate that the as-obtained samples are formed in a pure magnetite phase. A series of characterizations including conventional scanning/transmission electron microscopy (SEM/TEM), Mössbauer spectroscopy, magnetic testing and elemental mapping is conducted to unveil the structural and physical characteristics of the developed Fe₃O₄-Au magnetic nanocomposites. By adjusting the quantity of Au seeds coating on the polyethyleneimine-dithiocarbamates (PEI-DTC)-modified surfaces of Fe₃O₄ hollow microspheres, the correlation between the amount of Au seeds and the catalytic ability of Fe₃O₄-Au magnetic nanocomposites for 4-nitrophenol (4-NP) is investigated systematically. Importantly, bearing remarkable recyclable features, our developed Fe₃O₄-Au magnetic nanocomposites can be readily separated with a magnet. Such Fe₃O₄-Au magnetic nanocomposites shine the light on highly efficient catalysts for 4-NP reduction at the mass production level.

Time resolved photoluminescence (TRPL) and transient absorption (TA) spectroscopy reveal an ultrafast charge transfer (CT) process, with an electron localization time constant $39\pm 9\text{ps}$ , between the ZnO host and the Cu dopants in Cu-doped ZnO nanowires. This CT process effectively competes with the ZnO band edge emission, resulting in the quenching of the ZnO UV emission. TRPL measurements show that the UV decay dynamics coincides with the buildup of the Cu-related green emission. TA measurements probing the state-filling of the band edge and defect states provide further support to the CT model where the bleaching dynamics concur with the TRPL lifetimes.

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the piezoresistor are evaluated. By optimizing the process, the realization of the pressure sensing diaphragm with a controllable thickness is achieved, and good ohmic contact is ensured. To obtain higher sensitivity and high temperature stability, an SOI structure with a 1.5 µm ultra-thin monocrystalline silicon layer is used in device manufacturing. The device diaphragm size is 700 µm × 700 µm × 2.1 µm. The experimental results show that the fabricated piezoresistive pressure sensor has a high sensitivity of 2.255 mV/V/kPa and a sensing resolution of less than 100 Pa at room temperature. The sensor has a temperature coefficient of sensitivity (TCS) of −0.221 %FS/°C and a temperature coefficient of offset (TCO) of −0.209 %FS/°C at operating temperatures ranging from 20 °C to 160 °C. The reported piezoresistive microelectromechanical systems (MEMS) pressure sensors are fabricated on 8-inch wafers using standard CMOS-compatible processes, which provides a volume solution for embedded integrated precision detection applications of air pressure, offering better insights for high-temperature and miniaturized low-pressure sensor research.