Cuicui Yin

Cuicui Yin


Research Focus & Metrics

Academic Career Length

6Years (2021-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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24 March 2023 in Materials
Verified
Journal Article
Open access
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XWXiongsheng Wang
Xiongsheng Wang
CYCuicui Yin
Cuicui Yin
JWJuan Wang
Juan Wang
KZKai hong Zheng
Kai hong Zheng
ZZZhengrong Zhang
Zhengrong Zhang
YXYongnan Xiong
Yongnan Xiong
The viscous fingering phenomenon often occurs when a low-viscosity fluid displaces a high-viscosity fluid in a homogeneous porous media, which is an undesirable displacement process in many engineering applications. The influence of wetting gradient on this process has been studied over a wide range of capillary numbers (7.5 × 10−6 to 1.8 × 10−4), viscosity ratios (0.0025 to 0.04), and porosities (0.48 to 0.68), employing the lattice Boltzmann method. Our results demonstrate that the flow front stability can be improved by the gradual increase in wettability of the porous media. When the capillary number is less than 3.5 × 10−5, the viscous fingering can be successfully suppressed and the transition from unstable to stable displacement can be achieved by the wetting gradient. Moreover, under the conditions of high viscosity ratio (M > 0.01) and large porosity (Φ > 0.58), wetting gradient improves the stability of the flow front more significantly.

30 December 2021 in Crystals
Verified
Journal Article
Open access
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YSYao Shu
Yao Shu
SZShangwen Zhang
Shangwen Zhang
YXYongnan Xiong
Yongnan Xiong
XLXing Luo
Xing Luo
JHJiazhen He
Jiazhen He
KZKai hong Zheng
Kai hong Zheng
The interfacial mechanics and electrical properties of SiC reinforced copper matrix composites were studied via the first principles method. The work of adhesion (Wad) and the interfacial energies were calculated to evaluate the stabilities of the SiC/Cu interfacial models. The carbon terminated (CT)-SiC/Cu interfaces were predicted to be more stable than those of the silicon terminated (ST)-SiC/Cu from the results of the Wad and interfacial energies. The interfacial electron properties of SiC/Cu were studied via charge density distribution, charge density difference, electron localized functions and partial density of the state. Covalent C–Cu bonds were formed based on the results of electron properties, which further explained the fact that the interfaces of the CT-SiC/Cu are more stable than those of the ST-SiC/Cu. The interfacial mechanics of the SiC/Cu were investigated via the interfacial fracture toughness and ultimate tensile stress, and the results indicate that both CT- and ST-SiC/Cu interfaces are hard to fracture. The ultimate tensile stress of the CT-SiC/Cu is nearly 23 GPa, which is smaller than those of the ST-SiC/Cu of 25 GPa. The strains corresponding to their ultimate tensile stresses of the CT- and ST-SiC/Cu are about 0.28 and 0.26, respectively. The higher strains of CT-SiC/Cu indicate their stronger plastic properties on the interfaces of the composites.