The last decade has witnessed an increasing number of wireless standards for civil, military, and space communications. Along with the advances in integrated circuit (IC) technologies and the ever-growing requirements of high data rates, next-generation radios are expected to operate over multiple frequency bands. For example, carrier aggregation is used in LTE-Advanced radios to increase the bandwidth. However, it is challenging for traditional radios to operate over multiple frequency bands. In response to this, software-defined radios (SDRs) have been proposed to handle multiple bands through reconfiguration. They can adapt carrier frequency, transmission bandwidth, modulation, and encoding schemes by modifying digital signal processing (DSP) software algorithms [1]. In contrast to SDR, legacy communication systems are approaching their capability limits. They usually operate on a single band and require dedicated hardware. Thus, SDR is a promising radio technology to increase the flexibility of radio devices and reduce hardware and manufacturing costs, chip size, and power consumption [2].

In this paper, a low-profile, compact size, inexpensive, and easily integrable frequency reconfigurable antenna system is proposed. The proposed antenna consists of an inverted-F shape antenna, capacitors, and switching PIN diodes. The designed antenna element is fabricated on easy available and less expensive FR-4 substrate ( = 4.4, tan = 0.02). The switching diodes are incorporated within the radiating structure of the antenna design, and by changing the different states of PIN diodes, frequency reconfigurable response is achieved. While adjusting the different states of the diodes, the antenna resonates between 0.841 GHz and 2.12 GHz and covers six different frequency bands. The proposed system has compact size of . The gain of the antenna is between 1.89 and 2.12 dBi. The measurement results shows the good agreement with simulated results for different key performance parameters. Additionally, the proposed antenna shows omni-directional far-field characteristics for various different frequencies.

This paper presents the design and analysis of a continuously tunable low noise amplifier (LNA) with an operating frequency from 2.2 GHz to 2.8 GHz. Continuous tuning is achieved through a radio frequency impedance transformer network in the input matching stage. The proposed circuit consists of four stages, namely transformer stage, tuning stage, phase shifter and gain stage. Frequency tuning is controlled by varying output current through bias voltage of tuning stage. The circuit includes an active phase shifter in the feedback path of amplifier to shift the phase of the amplified signal. Phase shift is required to further achieve tunability through transformer. The LNA achieves a maximum simulated gain of 18 dB. The LNA attains a perfect impedance match across the tuning range with stable operation. In addition, it achieves a minimum noise figure of 1.4 dB.

This paper presents a metasurface-based linear-to-circular polarization converter with a flexible structure for conformal and wearable applications. The converter consists of nested S- and C-shaped split ring resonators in the unit cell and can convert linearly polarized incident waves into left-handed circularly polarized ones at 12.4 GHz. Simulation results show that the proposed design has a high polarization conversion rate and efficiency at the operating frequency. Conformal tests are also conducted to evaluate the performance under curvature circumstances. A minor shift in the operating frequency is observed when the converter is applied on a sinusoidal wavy surface.

This Letter presents the design and analysis of a tunable low noise amplifier (LNA) capable of achieving single band, dual band and wideband operations. The circuit features a modified tunable open stub matching to achieve a reconfigurable multiband response. The LNA adopts a varactor diode in the input matching stage to achieve reconfigurable modes. Two bias conditions for the varactor diode are analysed. The forward bias condition yields a wideband mode (1.6 to 2.5 GHz) and zero bias results in a concurrent dual band mode (0.9 and 1.7–2.5 GHz). In reverse bias condition, the bias voltage of varactor diode ( ) can be tuned to achieve one single band mode (1 GHz), and a tunable concurrent dual band mode, where the first band is fixed at 1 GHz and the second band is continuously tunable from 1.7 to 2.5 GHz. The LNA is fabricated in microwave integrated circuit process on an FR‐4 board. The measured power gain is 7–15 dB and noise figure is 1.2–2.2 dB across all bands. The measured 1 dB compression ( ) is , and at 0.9, 1 and 2.4 GHz, respectively.