Vadim Sirotkin

Dr. Vadim Sirotkin

Laboratory of theoretical physics, Institute of Microelectronics Technology and High Purity Materials, Chernogolovka, Moskovskaya Oblast’, Russia
orcid

Research Focus & Metrics

Academic Career Length

37Years (1990-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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5 September 2003 in Physica C: Superconductivity and its Applications
Verified
Journal Article
Closed access
NTN.A. Tulina
N.A. Tulina
VSVadim Sirotkin
Vadim Sirotkin

1 April 2006 in Microelectronic Engineering
Verified
Journal Article
Closed access
VSVadim Sirotkin
Vadim Sirotkin
ASA. Svintsov
A. Svintsov
SZS. Zaitsev
S. Zaitsev
HSH. Schift
H. Schift

1 October 2008 in Physics Letters A
Verified
Journal Article
Closed access
NTN.A. Tulina
N.A. Tulina
IBI.Yu. Borisenko
I.Yu. Borisenko
VSVadim Sirotkin
Vadim Sirotkin

1 May 2007 in Microelectronic Engineering
Verified
Journal Article
Closed access
VSVadim Sirotkin
Vadim Sirotkin
ASAlexander Svintsov
Alexander Svintsov
HSHelmut Schift
Helmut Schift
SZSergey Zaitsev
Sergey Zaitsev

1 May 2008 in Microelectronic Engineering
Verified
Journal Article
Closed access
NKNikolaos Kehagias
Nikolaos Kehagias
VRVincent Reboud
Vincent Reboud
CTClivia Marfa Sotomayor Torres
Clivia Marfa Sotomayor Torres
VSVadim Sirotkin
Vadim Sirotkin
ASAlexander Svintsov
Alexander Svintsov
SZSergey Zaitsev
Sergey Zaitsev

1 March 2013 in Bulletin of the Russian Academy of Sciences: Physics
Verified
Journal Article
Closed access
PDF file
NTN. A. Tulina
N. A. Tulina
VSVadim Sirotkin
Vadim Sirotkin
IBI. Yu. Borisenko
I. Yu. Borisenko
AIA. A. Ivanov
A. A. Ivanov
Simulations are used to study the influence of nonuniform electric field distribution at a heterojunction interface on the effect of bipolar resistive switching in oxide compounds. Computer models show that a conducting channel forms at the edge of a heterojunction area characterized by strong local increase in the electric field intensity. The computations are confirmed by the low temperature properties of metastable phases in heterojunctions based on high temperature superconductors.