Hongquan Song

Dr. Hongquan Song


Research Focus & Metrics

Academic Career Length

14Years (2013-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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19 July 2017 in Physical Review Materials
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HSHongquan Song
Hongquan Song
FTFuyang Tian
Fuyang Tian
QHQing-Miao Hu
Qing-Miao Hu
LVLevente Vitos
Levente Vitos
YWYandong Wang
Yandong Wang
NCNanxian Chen
Nanxian Chen
The severe local lattice distortion, induced mainly by the large atomic size mismatch of the alloy components, is one of the four core effects responsible for the unprecedented mechanical behaviors of high-entropy alloys (HEAs). In this work, we propose a supercell model, in which every lattice site has similar local atomic environment, to describe the random distributions of the atomic species in HEAs. Using these supercells in combination with abinitio calculations, we investigate the local lattice distortion of refractory HEAs with body-centered-cubic structure and 3d HEAs with face-centered-cubic structure. Our results demonstrate that the local lattice distortion of the refractory HEAs is much more significant than that of the 3d HEAs. We show that the atomic size mismatch evaluated with the empirical atomic radii is not accurate enough to describe the local lattice distortion. Both the lattice distortion energy and the mixing entropy contribute significantly to the thermodynamic stability of HEAs. However the local lattice distortion has negligible effect on the equilibrium lattice parameter and bulk modulus.

1 October 2016 in Journal of Alloys and Compounds
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HSHongquan Song
Hongquan Song
FTFuyang Tian
Fuyang Tian
DWDongping Wang
Dongping Wang

21 June 2019 in Materials Chemistry Frontiers
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JMJunsheng Ma
Junsheng Ma
Mingpeng YuMingpeng Yu
Mingpeng Yu
HYHuanyu Ye
Huanyu Ye
HSHongquan Song
Hongquan Song
DWDongxue Wang
Dongxue Wang
HQHong Qiu
Hong Qiu
A heterostructured host composed of porous g-C 3 N 4 and N-doped graphene was fabricated by a template-free strategy. The hybrid display excellent cyclability and high coulombic efficiency due to the enhanced polysulfide anchoring-conversion capability.

3 September 2021 in Metals
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HGHuijuan Ge
Huijuan Ge
CCChengfeng Cui
Chengfeng Cui
HSHongquan Song
Hongquan Song
FTFuyang Tian
Fuyang Tian
Using the ab initio calculations, we study the lattice distortion of HfNbTaTiVC5, HfNbTaTiZrC5 and MoNbTaTiVC5 high-entropy carbide (HEC) ceramics. Results indicate that the Bader atomic radius and charge transfer in HECs is very close to those from binary carbide. The degree of lattice distortion strongly depends on the alloying element. The Bader atomic radius can excellently describe the lattice distortion in HEC. Further, the corresponding atomic radius and formation enthalpy of binary carbides may be indicators to predict the single-phase HECs.

20 June 2016 in Modern Physics Letters B
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HSHongquan Song
Hongquan Song
MZMing Zhao
Ming Zhao
JLJian-Guo Li
Jian-Guo Li

8 August 2022 in Nanomaterials
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CFChuangshi Feng
Chuangshi Feng
XFXiaobin Feng
Xiaobin Feng
ZGZhou Guan
Zhou Guan
HSHongquan Song
Hongquan Song
TWTianli Wang
Tianli Wang
FZFuxiang Zhang
Fuxiang Zhang
Multi-component nitride thin films usually show high hardness and good wear resistance due to the nanoscale structure and solid-solution strengthening effect. However, the state of N atoms in the thin film and its effects on the compressive strength is still unclear. In this work, (AlTiVCr)N multi-component nitride thin films with a face-centered cubic (FCC) structure prepared by the direct current magnetron sputtering method exhibit a superior strength of ~4.5 GPa and final fracture at a strain of ~5.0%. The excellent mechanical properties are attributed to the synergistic effects of the nanocrystalline structure, covalent bonding between N and metal atoms, and interstitial strengthening. Our results could provide an intensive understanding of the relationship between microstructure and mechanical performances for multi-component nitride thin films, which may promote their applications in micro- and nano-devices.