A compact analytical model of current transfer was developed to estimate the characteristics of heterostructured devices. The absence of empirical correction factors and the explicit accounting of the interelectronic interaction differentiates it from previous similar models. The model obtains an estimates of the electron density in the quantum well of the heterostructural channel and applies a self-consistent correction for resonance levels. It also provides accuracy in the positive differential resistance region of the I–V characteristics in the AlGaAs structures, with an average relative error not exceeding 2%. The time complexity of the calculations of the I–V characteristics using this model is several orders of magnitude less than that of calculations using ab initio models. Its high accuracy and low temporal complexity of calculations of I–V characteristics allow this model to be integrated in systems for the design and calculation of reliability indicators for devices, including terahertz devices.

This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.

A solution to the problem of resonant tunneling current saturation is proposed. This problem does not allow, within the traditional compact models, a correct qualitative and quantitative analysis to be carried out of the volt-ampere characteristics of double-barrier heterostructures. The reason for this problem is the asymptotic behavior of the function describing the structure transparency, so a non-saturating compact model was proposed to solve the problem of current transfer analysis in the region of negative differential conductivity. Validation of the proposed model confirmed its adequacy without losing the ability to analyze current transfer processes. This makes the developed compact model effective for simulating the operation of a wide range of devices with a resonant tunneling diode as a nonlinear element, regardless of the position of the operating point.