Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi‐modal sensing and recording, and multifunctional integration are critical aspects limiting their applications. Recently, a new synaptic device architecture, the ion‐gating vertical transistor (IGVT), has been successfully realized and timely applied to perform brain‐like perception, such as artificial vision, touch, taste, and hearing. In this short time, IGVTs have already achieved faster data processing speeds and more promising memory capabilities than many conventional neuromorphic devices, even while operating at lower voltages and consuming less power. This work focuses on the cutting‐edge progress of IGVT technology, from outstanding fabrication strategies to the design and realization of low‐voltage multi‐sensing IGVTs for artificial‐synapse applications. The fundamental concepts of artificial synaptic IGVTs, such as signal processing, transduction, plasticity, and multi‐stimulus perception are discussed comprehensively. The contribution draws special attention to the development and optimization of multi‐modal flexible sensor technologies and presents a roadmap for future high‐end theoretical and experimental advancements in neuromorphic research that are mostly achievable by the synaptic IGVTs.

Choreographing the adaptive shapes of patterned surfaces to exhibit designable mechanical interactions with their environment remains an intricate challenge. Here, a novel category of strain‐engineered dynamic‐shape materials, empowering diverse multi‐dimensional shape modulations that are combined to form fine‐grained adaptive microarchitectures is introduced. Using micro‐origami tessellation technology, heterogeneous materials are provided with strategic creases featuring stimuli‐responsive micro‐hinges that morph precisely upon chemical and electrical cues. Freestanding multifaceted foldable packages, auxetic mesosurfaces, and morphable cages are three of the forms demonstrated herein of these complex 4‐dimensional (4D) metamaterials. These systems are integrated in dual proof‐of‐concept bioelectronic demonstrations: a soft foldable supercapacitor enhancing its power density (≈108 mW cm⁻²), and a bio‐adaptive device with a dynamic shape that may enable novel smart‐implant technologies. This work demonstrates that intelligent material systems are now ready to support ultra‐flexible 4D microelectronics, which can impart autonomy to devices culminating in the tangible realization of microelectronic morphogenesis.

The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. Here we present a viable solution by applying rolled-up metallic nanomembranes as the drain-electrode (which enables the incorporation of few nanometer-thick semiconductor layers) and by lithographically patterning the source-electrode. Our vertical organic transistors operate at ultra-low voltages and demonstrate high current densities (~0.5 A cm⁻²) that are found to depend directly on the number of source edges, provided the source perforation gap is wider than 250 nm. We anticipate that further optimization of device structure can yield higher current densities (~10 A cm⁻²). The use of rolled-up drain-electrode also enables sensing of humidity and light which highlights the potential of these devices to advance next-generation sensing technologies.

The investigation of enhanced Raman signal effects and the preparation of high-quality, reliable surface-enhanced Raman scattering (SERS) substrates is still a hot topic in the SERS field. Herein, we report an effect based on the shape-induced enhanced Raman scattering (SIERS) to improve the action of gold nanorods (AuNRs) as a SERS substrate. Scattered electric field simulations reveal that bare V-shaped Si substrates exhibit spatially distributed interference patterns from the incident radiation used in the Raman experiment, resulting in constructive interference for an enhanced Raman signal. Experimental data show a 4.29 increase in Raman signal intensity for bare V-shaped Si microchannels when compared with flat Si substrates. The combination of V-shaped microchannels and uniform aggregates of AuNRs is the key feature to achieve detections in ultra-low concentrations, enabling reproducible SERS substrates having high performance and sensitivity. Besides SIERS effects, the geometric design of V-shaped microchannels also enables a “trap” to the molecule confinement and builds up an excellent electromagnetic field distribution by AuNR aggregates. The statistical projection of SERS spectra combined with the SIERS effect displayed a silhouette coefficient of 0.83, indicating attomolar (10^–18 mol L^–1) detection with the V-shaped Si microchannel.