The synthesis of surface-active structures is important for creating many applications. The structural formation of SnO${}_2$ thin films in the range from 1.4 to 1.53 pH is studied in this work. This process occurs on the surface of the sample in the range of 1.4 to 1.49 and in the volume in the range of 1.51 to 1.53. SnO${}_2$ is formed after annealing at 400 ${}^{\circ }$C, according to XRD. Doping NH${}_4$OH to solution stimulates particle coagulation and gel formation. All of these have an impact on the transparency of samples investigated by spectrophotometric methods. By increasing the pH, the resistance raises at room temperature. The E${}_g$ calculation along the fundamental absorption edge shows that it is greater than 3.6 eV’ for SnO${}_2$ films. According to the Burstein–Moss effect, a change of the bandgap is related to the increased concentration of the free charge carriers. Elemental analysis has shown that chlorine ions are considered to be additional sources of charge carriers. The value pH = 1.49 is critical since there is a drastic change in the structure of the samples, the decrease in transparency is replaced by its increase, and the energy of activation of impurity levels is changed.

The formation of complex surface morphology of a multilayer structure, the processes of which are based on quantum phenomena, is a promising domain of the research. A hierarchy of pore of various sizes was determined in the initial sample of porous silicon by the atomic force microscopy. After film deposition by spray pyrolysis, ZnO nanoclusters regularly distributed over the sample surface were formed. Using the electron paramagnetic resonance (EPR) method it was determined that the localization of paramagnetic centers occurs more efficiently as a result of the ZnO deposition. An increase in the number of deposited layers, leads to a decrease in the paramagnetic center relaxation time, which is probably connected with the formation of ZnO nanocrystals with energetically stable properties. The nucleation and formation of nanocrystals is associated with the interaction of particles with an uncompensated charge. There is no single approach to determine the mechanism of this process. By the EPR method supplemented with the signal cyclic saturation, spectral manifestations from individual centers were effectively separated. Based on electron paramagnetic resonance and photoluminescence studies it was revealed that the main transitions between energy levels are due to oxygen vacancies and excitons.

The detection of particles with uncompensated charge and the determination of the features of their interaction during the formation of nanocrystals on substrates with a developed surface are an interesting area of research. The porous surface formed via the electrochemical etching of silicon acquired fractal properties as a result of the deposition of zinc oxide layers. Microscopy methods using different resolutions revealed a hierarchical structure of the surface, where each of the three consecutive levels contains uniformly distributed formations. The deposition of 20 layers of ZnO maximizes the concentration of nanocrystals at the pore boundaries, while the deposition of 25 layers leads to the formation of a continuous layer. The increase in photoluminescence intensity with an increase in the number of deposited layers is due to the saturation of surface nanostructures with electrons through several mechanisms. Electron paramagnetic resonance (EPR) studies have shown that the main mechanism of radiation recombination is the capture of electrons on oxygen vacancies. The different nature of the EPR saturation of the signal of interconnected paramagnetic centers revealed the formation of zinc oxide particles at the boundaries of pores with different sizes. The results of these studies of surface-active structures effectively complement the knowledge about sensory materials.

This study presents a density functional theory (DFT) investigation of the electronic response of graphene doped with various atoms (B, N, Al, Si, S, Ga) under biaxial strain. The calculations were performed using the PBE exchange–correlation functional within the generalized gradient approximation (GGA), as implemented in the DMol³ code. The Fermi energy was used as the primary indicator to evaluate strain sensitivity across a deformation range from −0.05 to +0.05. The results reveal a strong dependence of the electronic response on the type of dopant. Ga- and Al-doped graphene systems exhibit the most pronounced Fermi level shifts, up to 0.6 eV, indicating high sensitivity to mechanical strain. In contrast, B- and N-doped graphene show more moderate but stable and linear changes, which may be advantageous for predictable sensor behavior. These findings highlight the critical role of dopant selection in engineering strain-responsive graphene materials and support a design framework for their integration into high-performance flexible electronics and sensing applications.

In this work, the effects of lyophobicity and lyophilicity of film-forming systems on the properties of thin nanostructured films was studied. Systematic series of experiments were carried out with lyophilic film-forming systems: SnCl₄/EtOH, SnCl₄/EtOH/NH₄F, SnCl₄/EtOH/NH₄OH and lyophobic systems: SnO₂/EtOH and SnO₂/EtOH/NH₄F. Film growth mechanisms are determined depending on the type of film-forming system. The surface of the films was studied using a scanning electron microscope and an optical microscope. The spectrophotometric method is used to study the transmission spectra and the extinction coefficient. The surface resistance of the films was determined using the four-probe method. The quality factor and specific conductivity of the films are calculated. It was found that the addition of a fluorinating agent (NH₄F) to a film-forming system containing SnO₂ in the form of a dispersed phase does not lead to an increase in the specific conductivity of the films. X-ray diffraction analysis proved the incorporation of fluorine ions into the structure of the film obtained from the SnCl₄/EtOH/NH₄F system by the presence of SnOF₂ peaks. In films obtained from SnO₂/EtOH/NH₄F systems, there are no SnOF₂ peaks. In this case, ammonium fluoride crystallizes as a separate phase and decomposes into volatile compounds.