In the open and dynamic Internet computing environment, situational data integration applications appear to be trendy. The situational data integration requirements are often immediate and can't be totally defined in advance. Data service mashup is an effective approach to dealing with situational data integration problems to certain extent. It offers agility by providing the visual user interface to expose the data integration capabilities to enable non-professional users to solve transient data integration problems. In order to assist the non-professional users to select and link the composition operator, this paper aims to work toward an approach for interactive recommendation of the candidate composition operators. Based on the observation that many mashup patterns can be derived according to their functionalities, this paper proposes a composition operator recommendation algorithm combining the rule-based and statistics-based methods. We also experimentally demonstrated the accuracy of our approach.

The high-temperature growth of p-type layers via metal-organic chemical vapor deposition (MOCVD) often leads to thermal degradation of the InGaN quantum wells (QWs) in green laser diodes. In this study, a hybrid MOCVD-MBE (molecular beam epitaxy) growth approach was employed to fabricate green laser diodes, achieving high device performance and excellent uniformity, with a lasing wavelength of 504.9 nm and a threshold current density of 2.8 kA/cm2. Comparative device performance investigation demonstrates that replacing the MOCVD-grown p-type layers with those grown by MBE effectively suppresses thermal degradation in green InGaN QWs.

Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic duty cycling on the morphology, crystalline quality, Mg doping concentration, and electrical properties of GaN:Mg films grown by MME. When the metal shutter duty cycling is 20 s open/10 s close, the sample has smooth surface with clear steps even with Mg doping concentration higher than 1 × 10²⁰ cm⁻³. The RMS roughness is about 0.5 nm. The FWHM of (002) XRD rocking curve is 230 arcsec and the FWHM of (102) XRD rocking curve is 260 arcsec. As result, a hole concentration of 5 × 10¹⁸ cm⁻³ and a resistivity of 1.5 Ω·cm have been obtained. The hole concentration increases due to the incorporation of surface accumulated Mg dopants into suitable Ga substitutional sites with minimal formation of compensatory defects.