Electromagnetically induced transparency (EIT) based on dielectric metamaterials has attracted attentions in recent years because of its functional manipulation of electromagnetic waves and high refractive index sensitivity, such as high transmission, sharp phase change, and large group delay, etc. In this paper, an active controlled EIT effect based on a graphene-dielectric hybrid metamaterial is proposed in the near infrared region. By changing the Fermi level of the top-covered graphene, a dynamic EIT effect with a high quality factor (Q-factor) is realized, which exhibits a tunable, slow, light performance with a maximum group index of 2500. Another intriguing characteristic of the EIT effect is its high refractive index sensitivity. In the graphene-covered metamaterial, the refractive index sensitivity is simulated as high as 411 nm/RIU and the figure-of-merit (FOM) is up to 159, which outperforms the metastructure without graphene. Therefore, the proposed graphene-covered dielectric metamaterial presents an active EIT effect in the near infrared region, which highlights its great application potential in deep optical switching, tunable slow light devices, and sensitive refractive index sensors, etc.

Aqueous CdTe quantum dots solar cells have been successfully fabricated by the blade coating method on the magnesium zinc oxide (Zn_1−xMg_xO or ZMO) window layer. Compared with the ZMO mono-window layer, the ZMO/CdS bi-window layer can decrease the interface recombination effectively due to the lower lattice mismatch and fast interdiffusion between CdS and CdTe. Moreover, the high temperature annealing of the CdTe quantum dots absorbed layer passivates the grain boundary of the CdTe crystalline via the replacement reaction of tellurium with sulfur. Finally, the conversion efficiency of our aqueous CdTe quantum dots solar device is improved from 3.21% to 8.06% with the introduction of the CdS interlayer and high temperature CdCl₂ annealing. Our aqueous CdTe quantum dots solar devices show a large open circuit voltage and fill factor which are comparable with the conventional devices that are fabricated with organic CdTe quantum dots. We believe that it is the spike-like conduction band alignment between the ZMO and CdTe absorbed layer that reduces the majority carrier concentration, leading to the decrease in interface recombination probability.