Phase change memory (PCM), a typical representative of new storage technologies, offers significant advantages in terms of capacity and endurance. However, among the research on phase change materials, thermal stability and switching speed performance have always been the direction where breakthroughs are needed. In this research, as a high-speed and good thermal stability material, Ta was proposed to be doped in Sb₃Te₁ alloy to improve the phase transition performance and electrical properties. The characterization shows that Ta-doped Sb₃Te₁ can crystallize at temperatures up to 232 °C and devices can operate at speeds of 6 ns and 8 × 10⁴ operation cycles. The reduction of grain size and the density change rate (3.39%) show excellent performances, which are both smaller than that of Ge₂Sb₂Te₅ (GST) and Sb₃Te₁. These properties conclusively demonstrate that Ta incorporation of Sb₃Te₁ alloy is a material with better thermal stability and faster crystallization rates for PCM applications.

Phase change materials have issues in the automotive industry and in‐memory computing due to their limited thermal stability and high power consumption. Consequently, numerous studies are conducted to enhance the performance of these materials. Uncertainty persists regarding the effects and mechanisms of various doping on the parent material. In this study, four metallic doping elements are selected, and their effects on Sb₂Te₃ are meticulously analyzed through experiments and ab initio calculations. The thermal stability of Sb₂Te₃ has been somewhat enhanced by doping these four elements, with Ta doping having the most impact. According to the ab initio molecular dynamics, this improvement results from the tetrahedral centered In and the increased coordination numbers of Ta, Ti, and Sc. Sc located at the center of the octahedron can accelerate the crystallization process. Ta, in particular, exerts the greatest influence on the migration rates of Sb and Te, resulting in the slowest grain growth rate. Simultaneously, it maximizes the delay in the transition from the cubic phase to the hexagonal phase. These features are beneficial for reducing power consumption. The elucidation of the distinct effects of doping elements sets the stage for phase change memory to adapt to various application scenarios.