This paper presents the use of radio-frequency identification (RFID) technology for the real-time remote monitoring of body temperature, while an associated program can determine the location of the body carrying the respective sensor. The RFID chip’s internal integrated temperature sensor is used for both the human-body temperature detection and as a measurement device, while using radio-frequency communication to broadcast the temperature information. The adopted RFID location technology makes use of reference tags together with a nearest neighbor localization algorithm and a multiple-antenna time-division multiplexing location system. A graphical user interface (GUI) was developed for collecting temperature and location data for the data fusion by using RFID protocols. With a puppy as test object, temperature detection and localization experiments were carried out. The measured results show that the applied method, when using a mercury thermometer for comparison in terms of measuring the temperature of the dog, has a good consistency, with an average temperature error of 0.283 °C. When using the associated program over the area of 12.25 m², the average location error is of 0.461 m, which verifies the feasibility of the sensor-carrier location by using the proposed program.

This study proposes an on-chip terahertz (THz) detector designed with on-chip inset-feed rectangular patch antenna and catadioptric lens. The detector incorporates a dual antenna and dual NMOSFET structure. Radiation efficiency of the antenna reached 89.4% with 6.89 dB gain by optimizing the antenna inset-feed and micro-strip line sizes. Simulated impedance was 85.55 − j19.81 Ω, and the impedance of the antenna with the ZEONEX horn-like catadioptric lens was 117.03 − j20.28 Ω. Maximum analyzed gain of two on-chip antennas with catadioptric lens was 17.14 dB resonating at 267 GHz. Maximum experimental gain of two on-chip patch antennas was 4.5 dB at 260 GHz, increasing to 10.67 dB at 250 GHz with the catadioptric lens. The proposed on-chip rectangular inset-feed patch antenna has a simple structure, compatible with CMOS processing and easily implemented. The horn-like catadioptric lens was integrated into the front end of the detector chip and hence is easily molded and manufactured, and it effectively reduced terahertz power absorption by the chip substrate. This greatly improved the detector responsivity and provided very high gain. Corresponding detector voltage responsivity with and without the lens was 95.67 kV/W with NEP = 12.8 pW/Hz^0.5 at 250 GHz, and 19.2 kV/W with NEP = 67.2 pW/Hz^0.5 at 260 GHz, respectively.

The appearance of all-dielectric micro–nano photonic devices constructed from high refractive index dielectric materials offers a low-loss platform for the manipulation of electromagnetic waves. The manipulation of electromagnetic waves by all-dielectric metasurfaces reveals unprecedented potential, such as focusing electromagnetic waves and generating structured light. Recent advances in dielectric metasurfaces are associated with bound states in the continuum, which can be described as non-radiative eigen modes above the light cone supported by metasurfaces. Here, we propose an all-dielectric metasurface composed of elliptic cross pillars arranged periodically and verify that the displacement distance of a single elliptic pillar can control the strength of the light–matter interaction. Specifically, when the elliptic cross pillar is C₄ symmetric, the quality factor of the metasurface at the Γ point is infinite, also called the bound states in the continuum. Once the C₄ symmetry is broken by moving a single elliptic pillar, the corresponding metasurface engenders mode leakage; however, the large quality factor still exists, which is called the quasi-bound states in the continuum. Then, it is verified by simulation that the designed metasurface is sensitive to the refractive index change of the surrounding medium, indicating that it can be applied for refractive index sensing. Moreover, combined with the specific frequency and the refractive index variation of the medium around the metasurface, the information encryption transmission can be realized effectively. Therefore, we envisage that the designed all-dielectric elliptic cross metasurface can promote the development of miniaturized photon sensors and information encoders due to its sensitivity.

The metasurfaces based on nanostructure film play an important role in many fields. Usually, the properties and functions of metasurfaces are limited by their structure. Once the metasurface samples are processed, their functions have already been restricted. The dual-function device designed in this work utilizes the phase transition characteristic of vanadium dioxide (VO₂). The entire layer of VO₂ film is inserted between the double metal micro-nano structure. When VO₂ film is in the metallic state after phase change, an isotropic narrow absorber is obtained in the terahertz (THz) region, which consists of a top Z-shaped meta-atom, a middle dielectric layer, and a bottom VO₂ film. By adjusting structure parameters of VO₂ film, perfect absorption is realized at the frequency of 0.525 THz with the overall absorption beyond 91%. When VO₂ is in insulating state, the top Z-shaped meta-atom will interact with the bottom Z-shaped structure, and the resonance coupling leads to the appearance of electromagnetically induced transparency (EIT). The designed metal-VO₂ hybrid metamaterial opens possible avenues for switchable functionalities in a single device.

This paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based on the Khmyrova model. Photoexcitation causes ORTD operating state between negative differential conductivity and positive differential conductivity, which power gain of the device can be control by photoexcitation. Numerical and analytical results show that photoexcitation enabling amplified modulator can realize much larger modulation depth (>95%) than what has been reported in photocontrolled modulator. Our results show the potential of this device in several fields of terahertz technology, such as photocontrolled modulator, mixer, and other two port networks.