We present a study of the lateral transport of a two-dimensional electron gas (2DEG) in a modulation-doped polar heterojunction (HJ). In contrast to previous studies, we assume that the Coulomb correlation among ionized impurities and among charged dislocations in the HJ is so strong that the 2DEG low-temperature mobility is not limited by impurity and dislocation scattering. The mobility, however, is specified by alloy disorder scattering and combined roughness scattering, which is the total effect induced by both the potential barrier and polarization roughness. The obtained results show that the alloy disorder and combined roughness scattering strongly depend on the alloy content and on the near-interface electron distribution. Our theory is capable of explaining the bell-shaped dependence of the lateral mobility on alloy content observed in AlGaN/GaN and on 2DEG density observed in AlN/GaN, which have not previously been explained.

In this paper, we examine the three-level optical Stark effect of excitons in InGaAs/InAlAs quantum dots using renormalized wavefunction formulation. The system was assumed to be irradiated by two lasers in which a strong laser dynamically couples electron-quantized levels, while a weaker laser probes interband absorption. Our results show that, in the presence of the resonant strong laser, two new absorption peaks of excitons appear in the absorption spectrum as a clear indication of the effect. In addition, we propose that the formation of the effect in low-dimensional structures could have connection to the splitting of electron levels. Furthermore, we seek to explain the essential dependence of the amplitude and position of two peaks on pump field detuning.

The crystal structure, electronic structure, and diffusion mechanism of Na ions in the cathode material Na₂Mn₃(SO₄)₄ are investigated based on the Heyd–Scuseria–Ernzerhof hybrid density functional method. The simultaneous motion model of polaron–sodium vacancy complexes was used to reveal the diffusion mechanism of Na ions in this material. Polaron formation at the Mn third-nearest neighbor to the Na vacancy was found. Two crossing and two parallel elementary diffusion processes of the polaron—Na vacancy complex were explored. The most preferable elementary diffusion process has an activation energy of 852 meV, which generates a zigzag-like pathway of Na-ion diffusion along the [001] direction in the whole material. Possessing a voltage of 4.4 V and an activation energy of 852 meV, Na₂Mn₃(SO₄)₄ is expected to be a good cathode material for rechargeable sodium ions.

We explore the variation of interband absorption spectra of GaAs spherical sector quantum dots (QDs) in response to a strong resonant laser, using the renormalized wave function method. Even though a spherical sector QD appears identical to a section cut from a spherical QD, it contains a controllable additional spatial parameter, the apical angle, which results in radically different wave functions and energy levels of particles, and is anticipated to exhibit novel optical properties. The obtained findings reveal that the apical angle of the dot has a considerable effect on the interband absorption spectrum. With the increase in the dot apical angle, a significant redshift of the interband absorption peaks has been identified. Increasing the pump laser detuning and dot radius yields similar results. Especially when a powerful resonant laser with tiny detuning is utilized, a dynamical coupling between electron levels arises, resulting in the formation of new interband absorption peaks. These new peaks and the former ones were similarly influenced by the aforementioned parameters. Furthermore, it is thought that the new peaks, when stimulated by a suitable laser, will produce the entangled states necessary for quantum information.

We study the ratio between different linewidths of the intersubband absorption in a quantum well. For roughness-related absorption, this ratio turns out to be independent of the roughness amplitude, so being a function of the correlation length only. Therefore, in contrast to the earlier belief, we may propose an efficient method for individual single-valued estimation of the two sizes of an interface profile from optical data. Instead of the simultaneous fitting of both sizes to the functional dependence of the linewidth at many experimental points, we perform a two-step fitting of (i) correlation length to the linewidth ratio at one point and then (ii) roughness amplitude to a linewidth at one point. This method is useful for experimental study of the interface morphology.