We explore the variation of interband absorption spectra of GaAs spherical sector quantum dots (QDs) in response to a strong resonant laser, using the renormalized wave function method. Even though a spherical sector QD appears identical to a section cut from a spherical QD, it contains a controllable additional spatial parameter, the apical angle, which results in radically different wave functions and energy levels of particles, and is anticipated to exhibit novel optical properties. The obtained findings reveal that the apical angle of the dot has a considerable effect on the interband absorption spectrum. With the increase in the dot apical angle, a significant redshift of the interband absorption peaks has been identified. Increasing the pump laser detuning and dot radius yields similar results. Especially when a powerful resonant laser with tiny detuning is utilized, a dynamical coupling between electron levels arises, resulting in the formation of new interband absorption peaks. These new peaks and the former ones were similarly influenced by the aforementioned parameters. Furthermore, it is thought that the new peaks, when stimulated by a suitable laser, will produce the entangled states necessary for quantum information.

In this paper, we study the exciton absorption spectra in InGaAs prolate ellipsoidal quantum dots when a strong pump laser resonant with electron quantized levels is active. Our obtained results by renormalized wavefunction theory show that, under suitable conditions, the initial exciton absorption peak is split into two new peaks as the evidence of the existence of the three-level optical Stark effect of excitons. We have suggested an explanation of the origin of the effect as well as investigating the effect of pump field energy, size, and geometric shape of the quantum dots on effect characteristics. The comparison with the results obtained in the spherical quantum dots implies the important role of geometric shape of the quantum structures when we examine this effect.

This study looks at the three-level optical Stark effect of excitons in GaAs cylindrical quantum wires, utilizing the renormalized wave function theory. By applying the three-level model consisting of the first two electron levels connected via a powerful pump laser and the first hole level, we observe the appearance of the excitonic optical Stark effect through the appearance of two separated peaks in the exciton absorption spectra. In addition, the strong impact of the pump laser detuning and the wire radius on the optical Stark effect are also put under thorough examination. Finally, a brief guidance for experimental verification is also suggested.

In this paper, renormalized wavefunction method was applied to study quantum beats of excitons in the InGaAs/InAlAs prolate ellipsoidal quantum dots (QDs). The obtained results show that, without the pump laser, the exciton absorption intensity is just a smooth curve. In contrast, when the system is illuminated by a strong pump laser resonating with two exciton levels, the oscillation behavior of exciton absorption intensity, which is known as quantum beats of excitons, is observed. That result can be interpreted as an indirect consequence of the Pauli exclusion principle leading to a splitting of the electron levels, which forms two close exciton levels, and if two excitons are excited coherently, the interference of these two excitons will finally form a quantum beat. The study also shows that the geometry shape of the QDs has strong influence on the properties of quantum beats. Changing the period of quantum beats in particular or optical properties in general in QDs thus becomes more flexible through changing their geometry shapes. This is one interested advantage of the ellipsoidal QDs and is expected to increase their applicability more than the spherical QDs.

Trong bài báo này, chúng tôi khảo sát sự tồn tại của các mode kết cặp phonon-plasmon quang dọc trong các lớp bán dẫn InGaN bằng lý thuyết hàm điện môi. Chúng tôi sử dụng một sóng hồng ngoại phân cực p chiếu xiên lên các lớp màng mỏng bán dẫn và chúng tôi quan sát thấy sự xuất hiện của bốn cực tiểu phân biệt trong phổ truyền qua của vật liệu. Hai cực tiểu đầu tương ứng với các mode phonon quang ngang của hai lớp bán dẫn thành phần InN và GaN còn hai cực tiểu còn lại là các mode kết cặp phonon-plasmon quang dọc. Lần đầu tiên chúng tôi đã đưa ra một phương trình dùng để tính số tần số của các mode kết cặp này. Ngoài ra, chúng tôi cũng khảo sát chi tiết ảnh hưởng của mật độ electron lên các mode kết cặp phonon-plasmon quang dọc.