This work aims to study the possibility of obtaining Al–C composite from AlSi10MgCu aluminum matrix with the addition of 500 nm-sized diamond particles by selective laser melting (SLM) process. Al–C composite powder was prepared by mechanical mixing to form a uniform cover along the surface of aluminum particles. The diamond content in the resulting AlSi10MgCu-diamond composite powder was equal to 0.67 wt %. The selection of the optimal SLM parameters for the obtained composite material is presented. For materials characterization, the following methods were used: scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectroscopy. X-ray photoelectron spectroscopy (XPS) was applied after SLM printing for a detailed investigation of the obtained composites. The presence of carbon additives and the formation of aluminum carbides in the material after the SLM process were demonstrated.

The process of porous iron powder spheroidization with a particle size from 45 to 85 μm is investigated in the microwave discharge and joint microwave

The process of deposition of allotropic modifications of carbon from the gas phase (5 vol % methane) with the use of microwave plasma on W wire 20 μm thick has been studied. The microwave power was changed in the range from 3 to 5 kW. The investigations of the structure of coatings, as well as the results of Raman spectroscopy, made it possible to establish that a microwave power of 3 kW results in the deposition of a diamond film with a crystallite size from 1 to 5 μm, microwave power of 4 kW causes the deposition of diamond-like carbon, and an increase in power up to 5 kW leads to the deposition of multigraphene film.

Представлен первый этап отработки методики создания тонких покрытий карбида гафния на поверхности углерод-углеродного композиционного материала (УУКМ) при относительно небольших температурах синтеза для снижения возникающих термических напряжений. Исследован процесс образования карбида гафния на поверхности УУКМ в системе HfCl₄‒СH₄‒Ar при 1050 °С и атмосферном давлении. Изучена скорость процесса сублимации хлорида гафния (IV) при различных расходах газаносителя. Построены гистограммы распределения частиц карбида гафния по размерам, в результате чего установлено полидисперсное распределение частиц на поверхности УУКМ с двумя максимумами по средним диаметрам 5,4 мкм и 295 нм.