Carbon nanotube (CNT) is widely regarded as a promising candidate for constructing sub‐10 nm field‐effect transistors (FETs). However, limited attention is carried out on the reliability of CNT FETs, which is critical for practical application. In this work, the bias temperature instability (BTI) effect in top‐gate CNT FETs is thoroughly investigated under a wide range of environment temperatures from 200 to 400 K for the first time. Notably, the threshold voltage (V_th) shifts induced by BTI are measured down to 0.38 V, which is ≈2–3 times smaller than those reported in previous studies. In addition, by optimizing the device fabrication process, the reliability of the BTI effects in CNT FETs can be further improved. The optimized CNT FET exhibits a Normalized BTI shift down to ≈0.10 V/(MV cm⁻¹), which represents the most reliable top‐gate nano‐devices to date.

Recent studies on carbon nanotube (CNT) field-effect transistors (FETs) and integrated circuits (ICs) have shown their potential in radiation tolerance. However, most studies have focused on the displacement damage (DD) effect and total ionizing dose (TID) effect, while the single event effect (SEE) remains insufficiently explored. In this work, we thoroughly examined the SEE of the CNT devices. Using a pulse laser as the irradiation source, the CNT FETs and static random-access memory (SRAM) exhibited an excellent radiation tolerance with a laser threshold energy of 5 nJ/pulse for SEE. Additionally, we used technology computer-aided design (TCAD) tools to explore SEE mechanisms of the CNT-based electronics. Owing to the nanoscale cross-sections and the special SEE mechanism in CNT, the CNT FETs and SRAMs presents higher SEE tolerance compared to the Si-based devices, meaning that CNT based ICs are an excellent technology for the applications of outer space exploration.

In this study, top-gate molybdenum disulfide (MoS2) field-effect transistors (FETs) with a recorded electron irradiation tolerance up to 1016 e/cm2 fluence were fabricated. To quantify the radiation effects, MoS2 FETs with various channel length (L) and dielectric thickness (tox) values were exposed to electron irradiation with fluences of 1014, 1015, and 1016 e/cm2, and the radiation-induced performance degradations were extracted. Thanks to the 7.1 × 1010 eV−1 · cm−2 ultra-low interface state density in MoS2 FETs, the radiation-induced charge trapping can be largely suppressed, guaranteeing high-radiation tolerance. The largest degradation was observed after a 1015 e/cm2 radiation. Moreover, comparative studies indicated that increasing L and reducing tox can further enhance the radiation tolerance, reducing the threshold voltage shift and subthreshold swing enlargement to −0.29 V and 2.1 mV/dec, respectively. These results surpass those in all published thin-film transistors, promoting MoS2 FETs for applications in space exploration and nuclear technology.

Two-dimensional (2D) semiconductor materials, with their atomic thickness, effectively enhance electrostatic gate coupling and thus outperform traditional silicon in short-channel applications. Current top-gated field-effect transistors (FETs) based on molybdenum disulfide (MoS ${}_{{2}}\text {)}$ face challenges in forming a high-quality gate interface due to manufacturing process limitations. In this work, a H₂O presoak ALD process is demonstrated to suppress the interface trap density (D ${}_{\text {it}}\text {)}$ in MoS₂ devices. The optimized HfO₂/MoS₂ gate stack presented a low D_it of $1.07\times 10^{{10}}$ cm ${}^{-{2}}$ eV ${}^{-{1}}$ accurately assessed using the conductance method, which can satisfy the requirements for future high-performance digital ICs outlined by the IRDS.

Defects in nanomaterials are always considered as instability factors for device performance. However, we have discovered a positive role for the defects in monolayer molybdenum disulfide (MoS ₂ ) lattice in the registration and transformation of useful bio and chemical signals. In this study, we developed a liquid-gated MoS ₂ field-effect transistor (FET) employing a chemically synthesized MoS ₂ film that serves dual functions as both the active channel and pH-sensitive layer. Through defect engineering, we activated the inert basal plane of MoS ₂ , significantly enhancing the chemisorption of hydrogen ions (H⁺) at defect sites and improving specific responses to pH variations. The optimized defect-engineered, liquid-gated MoS ₂ FET demonstrates a low subthreshold swing ( SS ) of 70 mV/dec in electrolyte solution, approaching the theoretical limit, with a record-high current sensitivity of 534.8%/pH in the subthreshold region due to the smaller SS . Remarkably, the device demonstrates a minimal hysteresis width of 5 nA after two cycling tests. Combined with theoretical calculations, this study reveals the crucial role of defect sites in MoS ₂ for the adsorption of H ⁺ ions. The findings provide key insights for achieving high-performance pH sensors and offer important guidelines for maintaining the operational stability of FET biosensors in complex systems.