In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requires high frequency sampling at a high voltage (>600 V), we developed an innovative control method called the minimum power input control. The output of this minimum power input control can be presented in simple empirical equations allowing the optimal power transfer efficiency for 6.78 MHz resonant wireless power transfer (WPT). In order to reduce the switching loss, a gate drive design for the D-mode GaN HEMT, which is highly influential for the reliability of the resonant WPT, was also produced and described here for circuit designers.

The flyback converters are widely used in low power applications. The switch typically requires 600 V breakdown voltage in order to perform large step-down voltage. Thus, slight variation on the switch control can either permanently damage the switch or decrease the efficiency of the power conversion. In order to achieve higher power efficiency, the previous literature suggested operating the flyback converter in the discontinuous current mode (DCM). It is then required to understand the critical conditions of the DCM through analyzing the dynamic behavior and discontinuous current mechanism. This paper started from the current waveform analyses, proceeded to the derivation of zero current switching (ZCS) formulation, and finally reached the necessary conditions for the DCM. The entire DCM operation was divided into three phases that subsequently affect the result of the zero voltage switching (ZVS) and then to the ZCS. The experiment shows a power efficiency of over 96% when the output power is around 65 W. The switch used in this paper is a Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) that is advantageous at the high breakdown voltage up to 800 V. The important findings from the experiments include that the output power increases with the increasing input DC voltage and the duty cycle is rather linearly decreasing with the increasing switching frequency when both the zero voltage switching (ZVS) and ZCS conditions are satisfied simultaneously.

In this study, we investigated the resonance mechanism of 6.78 MHz resonant wireless power transfer (WPT) systems. The depletion mode of a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch the states in a class-E amplifier circuit in this high frequency. The D-mode GaN HEMT without a body diode prevented current leakage from the resonant capacitor when the drain-source voltage became negative. The zero-voltage switching control was derived according to the waveform of the resonant voltage across the D-mode GaN HEMT without the use of body diode conduction. In this study, the effect of the resonant frequency and the duty cycle on the resonance mechanism was derived to achieve the highest WPT efficiency. The result shows that the power transfer efficiency (PTE) is higher than 80% in a range of 40 cm transfer distance, and the power delivered to load (PDL) is measured for different distances. It is also possible to cover different applications related to battery charging and others using the proposed design.

The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns. This is because of the possibility of the gate to source voltage of the GaN HEMT surging to a negative voltage during the turn off transition. The existing solutions for this problem in the literature produce additional drawbacks such as reducing the switching frequency or introducing many additional components. These drawbacks may outweigh the advantages of using a GaN HEMT over its silicon (Si) alternative. This paper proposes two innovative gate drive circuits for D-mode GaN HEMTs—namely the GaN-switching based cascode GaN HEMT and the modified GaN-switching based cascode GaN HEMT. In these schemes, the Si MOSFET in series with the D-mode GaN HEMT is always turned on during regular operation. The GaN HEMT is then switched on and off by using a charge pump based circuit and a conventional gate driver. Since the GaN HEMT is driven independently, the highly negative gate-to-source voltage surge during turn off is avoided, and in addition, high switching frequency operation is made possible. Only two diodes and one capacitor are used in each of the schemes. The application of the proposed circuits is experimentally demonstrated in a high voltage flyback converter, where more than 96% efficiency is obtained for 60 W output load.

This paper attempts to describe a laser diode driver circuit using the depletion mode gallium nitride high electron mobility transistor (D-mode GaN HEMT) to generate nanosecond pulses at a repetition rate up to 10 MHz from the vertical-cavity surface-emitting laser (VCSEL). The feature of this driver circuit is a large instantaneous laser power output designed in the most efficient way. The design specifications include a pulse duration between 10 ns and 100 ns and a peak power up to above 100 W. The pulsed laser diode driver uses the D-mode GaN HEMT, which has very small C_oss difference between turn-on and turn-off states. The analysis is according to a laser diode model that is adjusted to match the VCSEL, made in National Yang Ming Chiao Tung University (NYCU). A design guide is summarized from the derivations and analysis of the proposed laser diode driver. According to the design guide, we selected the capacitor, resistor, and diode components to achieve 10 ns to 100 ns pulse duration for laser lighting. The experiment demonstrated that the maximum power-to-light efficiency can be as high as 86% and the maximum peak power can be 150 W, which matches the specifications of certain applications such as light detection and ranging (LiDAR).

This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A.