Prof. Dr. Edward Yi Chang

Dean of International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Prof. Dr. Edward Yi Chang

Dean of International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Co-authors

Following

Followers

Research Focus & Metrics

Explore full metrics on Scilit

Academic Career Length

32Years (1995-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications

4 March 2015 in Physica Status Solidi (RRL) – Rapid Research Letters

Journal Article

Layered MoS₂ grown on c ‐sapphire by pulsed laser deposition

Yen-Teng Ho

Chun‐Hao Ma

Tien‐Tung Luong

Lin‐Lung Wei

Tzu‐Chun Yen

Edward Yi Chang

22 February 2021 in Applied Physics Letters

Journal Article

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

Sung-Lin Tsai

Crystallographic characterization and the ferroelectric properties of 50 nm-thick sputter-deposited Al_0.78Sc_0.22N films deposited at room temperature (RT) and 400 °C are investigated. c-axis oriented growths were confirmed by x-ray diffraction patterns with rocking curve measurements for both samples. Al_0.78Sc_0.22N films were found to grow in the c-axis direction and showed poling-free ferroelectric properties, which are advantageous for practical memory and piezoelectric applications. Although the metal-ferroelectric-metal (MFM) capacitors represent low switching cycle endurance, MFM capacitors revealed remnant polarization (P_r) of 70 μC/cm² and 113 μC/cm² for RT- and 400 °C-deposited samples, respectively. Ferroelectric films with low-temperature process capability can open a wide range of applications.

27 September 2021 in Micromachines

Journal Article

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Lung-Hsing Hsu

Yung-Yu Lai

P. Tu

Catherine Langpoklakpam

Ya-Ting Chang

Edward Yi Chang

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST^®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

14 March 2008 in Proceedings of the IEEE

Journal Article

Active Learning for Interactive Multimedia Retrieval

Thomas S. Huang

Charlie K. Dagli

Shyamsundar Rajaram

Edward Yi Chang

Michael I. Mandel

Daniel P. W. Ellis

As the first decade of the 21st century comes to a close, growth in multimedia delivery infrastructure and public demand for applications built on this backbone are converging like never before. The push towards reaching truly interactive multimedia technologies becomes stronger as our media consumption paradigms continue to change. In this paper, we profile a technology leading the way in this revolution: active learning. Active learning is a strategy that helps alleviate challenges inherent in multimedia information retrieval through user interaction. We show how active learning is ideally suited for the multimedia information retrieval problem by giving an overview of the paradigm and component technologies used with special attention given to the application scenarios in which these technologies are useful. Finally, we give insight into the future of this growing field and how it fits into the larger context of multimedia information retrieval.

11 April 2018 in IEEE Electron Device Letters

Journal Article

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu

Ping-Cheng Han

Shih-Chien Liu

Ting-En Hsieh

Franky Juanda Lumbantoruan

Edward Yi Chang

A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V _th ) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V _th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V _th of +2.71 V at I _Dh = 1μA/mm, a high maximum current density of 820 mA/mm and low on-resistance (R _ON ) of 11.1 Ω · mm. The FE device also shows good V _th -temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.

1 January 2010 in Journal of the Electrochemical Society

Journal Article

The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE

Yuen-Yee Wong

Edward Yi Chang

Tsung-Hsi Yang

Jet-Rung Chang

Jui-Tai Ku

Kung-Liang Lin

The role played by different types of threading dislocations (TDs) on the electrical properties of AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy (MBE) was investigated. Samples with different defect structures and densities were prepared and measurements were taken from the same sample to study the correlative behavior of various TDs. From the Hall measurement, the electron mobility in two-dimensional electron gas channel was mainly controlled by the edge dislocation, which has a dominant amount in the material. The edge TDs acted as Coulomb scattering centers inside the channel and reduces the carrier mobility and increased its resistance. Screw TDs played a much significant role than edge TDs in determining the reverse-bias leakage current of Schottky barrier diodes. Leakage current is affected slightly by the reduction of free carrier density in the channel for samples with a higher edge TD density, but screw TD, which acted as the current leakage path, was more deleterious to the reverse-bias leakage current of AlGaN/GaN structure.

About Me

Edward Y. Chang received his B.S. degree in Materials Science and Engineering, from the National Tsing Hua University, Hsinchu, Taiwan in 1977, and his Ph.D. degree in Materials Science and Engineering from the University of Minnesota Minneapolis, MN in 1985. Dr. Chang was with Unisys Corporation GaAs Component Group, Eagan, MN, 1985 to 1988 and Comsat Labs Microelectronic Group from 1988 to 1992. He worked on the GaAs MMIC programs on both groups. He joined National Chiao Tung University (NCTU), Hsinchu, Taiwan, in 1992. In 1994, he helped set up the first GaAs MMIC production line in Taiwan, and become president of Hexawave Inc., Hsinchu, Taiwan, in 1995. He returned to the teaching position at NCTU in 1999, and is currently the Dean of International Semiconductor School and Chair professor of the Departments of Materials Science and Engineering and Electronics Engineering at NYCU. His research interests include new devices and process technologies for compound semiconductors for wireless communication and high-power electronic applications. Dr. Chang is an IEEE Life Fellow and JSAP (Japanese Society of Applied Physics) Fellow international. Currently, his research activities include InP, GaAs-based compound materials and devices for wireless communication and sub-millimetre-wave-imaging applications, GaN-based materials, high-frequency and high-power electronics (HEMT) applications, and III-V/ Si integration for logic applications.

Prof. Dr. Edward Yi Chang

Prof. Dr. Edward Yi Chang

Research Focus & Metrics

Academic Career Length

Publication Type Breakdown

Representative Publications

About Me