Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

The direct decomposition of toluene-containing humidified air at large flow rates was studied in two types of reactors with dielectric barrier discharge (DBD) features in ambient conditions. A scalable large-flow DBD reactor (single-layer reactor) was designed to verify the feasibility of large-flow plasma generation and evaluate its decomposition characteristics with toluene-containing humidified air, which have not been investigated. In addition, another large-flow DBD reactor with a multilayer structure (two-layer reactor) was developed as an upscale version of the single-layer reactor, and the scalability and superiority of the features of the multilayer structure were validated by comparing the decomposition characteristics of the two reactors. Consequently, the large-flow DBD reactor showed similar decomposition characteristics to those of the small-flow DBD reactor regarding applied voltage, flow velocity, flow rate, and discharge length, thus justifying the feasibility of large-flow plasma generation. Additionally, the two-layer reactor is more effective than the single-layer reactor, suggesting multilayer configuration is a viable scheme for further upscaled DBD systems. A high decomposition rate of 59.5% was achieved at the considerably large flow rate of 110 L/min. The results provide fundamental data and present guidelines for the implementation of the DBD plasma-based system as a solution for volatile organic compound abatement.

Dielectric barrier discharge (DBD)-based technology is considered a promising alternative for controlling indoor air pollutants. However, its limited processing capacity and lack of design techniques have restricted its use in practical applications. This paper introduces a methodology for designing upscaled DBD reactors with a processing capacity of up to 1000 L/min for treating high-flow-rate gases to mitigate indoor air pollution. A ten-layer high-flow-rate DBD reactor was constructed, with fundamental characterizations, including electrical and spectroscopic measurements, conducted to verify the feasibility of the proposed methodology. In particular, the flow paths of the ten-layer DBD reactor were optimized by incorporating an air diffuser and perforated metal plates, all without significant modifications. Computational fluid dynamics simulations showed a remarkably improved velocity uniformity (0.35 m/s to 0.04 m/s, as evidenced by the velocity standard deviation) in the 10 flow channels. These simulation results were consistent with the experimental results, wherein the velocity standard deviation reduced from 1.38 m/s to 0.13 m/s. Moreover, multi-gas plasma ignition for up to six gas species and high-flow-rate plasma generation of up to 1000 L/min were achieved. These results provide the foundation for developing DBD technologies for practical applications in high-flow-rate gas treatment, particularly for controlling indoor air pollution.