The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the reliability of the chips. Traditional methods of defect characterization are destructive and cumbersome. In this study, a new defect inspection method was developed using Mueller matrix spectroscopic ellipsometry. TSV-Cu with a 3-μm-diameter and 8-μm-deep Cu filling showed three typical types of characteristics: overdishing (defect-OD), protrusion (defect-P), and defect-free. The process dimension for each defect was 13 nm. First, the three typical defects caused by CMP and annealing were investigated. With single-channel deep learning and a Mueller matrix element (MME), the TSV-Cu defect types could be distinguished with an accuracy rate of 99.94%. Next, seven effective MMEs were used as independent channels in the artificial neural network to quantify the height variation in the Cu filling in the z-direction. The accuracy rate was 98.92% after training, and the recognition accuracy reached 1 nm. The proposed approach rapidly and nondestructively evaluates the annealing bonding performance of CMP processes, which can improve the reliability of high-density integration.
As one of the most advanced and precise equipment in the world, a photolithography scanner is able to fabricate nanometer‐scale devices on a chip. To realize such a small dimension, the optical system is the fundamental, but the mechanical system often becomes the bottleneck. In the photolithography, the exposure is a dynamic process. The accuracy and precision of the movement are determined by the mechanical system, which is even more difficult to control compared with the optical system. In the mechanical system, there are four crucial components: the reticle and wafer stages, the linear motor, the metrology system, and the control system. They work together to secure the reticle and substrate locating at the correct position, which determines the overlay and alignment performance in the lithography. In this paper, the principles of these components are reviewed, and the development history of the mechanical system is introduced.