We report the realization of an acoustic capacitive microphone formed by graphene/poly(methyl methacrylate) (PMMA). It is the first time that the ultra-large graphene/PMMA membrane suspended fully over the cavity has been fabricated by releasing the silicon dioxide sacrificial layer underneath the membrane. The novelty in the fabrication method is that the silicon dioxide layer has been etched by hydrogen fluoride vapor from the back of the partly etched silicon substrate. Using the new process, the ultra-large graphene/PMMA membrane, with a diameter to thickness ratio of 7800, has been suspended over the cavity with a 2 μm air gap. The spacing of 2 μm is the minimum gap over the graphene-based acoustic capacitive microphones which have been reported so far. The static deformation of the suspended graphene/PMMA membrane after silicon dioxide has been etched is estimated to be 270 nm. The aspect ratio of the membrane’s diameter over its static deformation is around 13,000, which shows that the graphene/PMMA membrane with a diameter of a few millimeters can be transferred and suspended over the substrate with relatively small deformation by releasing the sacrificial silicon dioxide layer. The dynamic behavior of the device under electrostatic actuation has been characterized. The acoustic response of the graphene/PMMA capacitive microphone has been measured, and the sensitivity has been observed to be −47.5 dB V (4.22 mV/Pa) ± 10%. The strain in the graphene/PMMA membrane is estimated to be 0.034%.

This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe₂) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (ΔI_ds) on the WSe₂ channel. The different doping types of the WSe₂ channel have been found to lead to different directions of ΔI_ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I_ds change for ZnO NRs on the p-type doped WSe₂ device and an ∼-10% I_ds change for the device with an n-type doped WSe₂. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.

Benefit from the good etching and patterning possibilities and its electrical properties, platinum silicide attracts renewed attention as a suitable candidate for next generation CMOS technologies recently. This work focuses on the effects of the trimethylaluminum (TMA) pretreatment on the PEALD growth of Pt film on Si substrate by using MeCpPtMe ₃ and ammonia plasma as precursors. The incubation period of ALD Pt was shortened by TMA pretreatment, and the saturation growth rate reached 0.2iÅ/cycle. X-ray diffraction showed that as-deposited films are strongly preferred orientation of the (iii) plane. The findings are important for obtaining well defined silicide films which would be used in the advanced CMOS source and drain technology.

A graphene/poly(methyl methacrylate) (PMMA) closed cavity resonator with a resonant frequency at around 160 kHz has been fabricated. A six-layer graphene structure with a 450 nm PMMA laminated layer has been dry-transferred onto the closed cavity with an air gap of 105 $\mathsf{\mu }$m. The resonator has been actuated in an atmosphere and at room temperature by mechanical, electrostatic and electro-thermal methods. The (1,1) mode has been observed to dominate the resonance, which suggests that the graphene/PMMA membrane has been perfectly clamped and seals the closed cavity. The degree of linearity of the membrane’s displacement versus the actuation signal has been determined. The resonant frequency has been observed to be tuned to around 4% by applying an AC voltage through the membrane. The strain has been estimated to be around 0.08%. This research puts forward a graphene-based sensor design for acoustic sensing.