Among europium compounds, pressure induced valence transitions and/or intermediate valence states are often observed. In such systems, applying pressure of several GPa can drive a Eu valence from divalent to almost trivalent. Non-centrosymmetric EuRhGe₃ possesses magnetic Eu²⁺ ions and exhibits antiferromagnetic ordering at ∼11 K at ambient pressure. Pressure resistant magnetic ordering and stable divalent Eu state have been reported in EuRhGe₃. Here, we study the pressure evolution of the Eu valence of EuRhGe₃ by high resolution x-ray absorption spectroscopy using the partial fluorescence yield method. Our study reveals a successive increase of the Eu valence with increasing pressure without any valence transition. The obtained mean Eu valence approaches ∼2.4 around 40 GPa at 300 K. The experimental data are also analyzed by a full multiplet configuration interaction calculation based on the single impurity Anderson model. The analysis reveals a decrease of the Eu 4f orbital occupation by applying pressure. Pressure evolution of the electronic structure studied by density functional theory suggests that the Rh ions have little contribution to the pressure evolution of the Eu valence, while it implies an active involvement of the Ge ions.

Semiconducting SnSe, an analog of black phosphorus, recently attracted great scientific interest due to a disputed report of a large thermoelectric figure of merit, which has not been reproduced subsequently. Here we concentrate on the low-temperature ground state. To gain a better understanding of the system, we present magneto-transport properties in high-quality single crystals of as-grown, lightly doped SnSe down to liquid helium temperatures. We show that SnSe behaves as a p-type doped semiconductor in the vicinity of a metal-insulator transition. Electronic transport at the lowest temperatures is dominated by the hopping mechanism. Negative magnetoresistance at low fields is well described by antilocalization, while positive magnetoresistance at higher fields is consistent with the shrinkage of localized impurity wavefunctions. At higher temperatures, a dilute metallic regime is realized where elusive T² and B² resistivity dependence is observed, posing a challenge to theoretical comprehension of the underlying physical mechanism.

We report on the pressure evolution of the electronic and crystal structures of the noncentrosymmetric antiferromagnet ${\mathrm{EuCoGe}}_3$. Using a diamond anvil cell, we performed high pressure fluorescence detected near-edge x-ray absorption spectroscopy at the Eu $L_3$, Co $K$, and Ge $K$ edges and synchrotron powder x-ray diffraction. In the Eu $L_3$ spectrum, both divalent and trivalent Eu peaks are observed from the lowest pressure measurement ($\sim 2$ GPa). By increasing pressure, the relative intensity of the trivalent Eu peak increases, and an average Eu valence continuously increases from 2.2 at 2 GPa to 2.31 at $\sim 50$ GPa. On the other hand, no discernible changes are observed in the Co $K$ and Ge $K$ spectra as a function of pressure. With the increase in pressure, lattice parameters continuously decrease without changing $I4mm$ symmetry. Our study revealed a robust divalent Eu state and an unchanged crystal symmetry of ${\mathrm{EuCoGe}}_3$ against pressure.

We report on the pressure evolution of the electronic and crystal structures of the noncentrosymmetric antiferromagnet EuCoGe3. Using a diamond anvil cell, we performed high pressure fluorescence detected near-edge x-ray absorption spectroscopy at the Eu L3, Co K, and Ge K edges and synchrotron powder x-ray diffraction. In the Eu L3 spectrum, both divalent and trivalent Eu peaks are observed from the lowest pressure measurement (~2 GPa). By increasing pressure, the relative intensity of the trivalent Eu peak increases, and an average Eu valence continuously increases from 2.2 at 2 GPa to 2.31 at~50 GPa. On the other hand, no discernible changes are observed in the Co K and Ge K spectra as a function of pressure. With the increase in pressure, lattice parameters continuously decrease without changing I4mm symmetry. Our study revealed a robust divalent Eu state and an unchanged crystal symmetry of EuCoGe3 against pressure.

Murunskite (K₂FeCu₃S₄) is a layered sulfosalt chalcogenide that occupies a unique position between the cuprate and iron pnictide families: it shares electronic characteristics with the former and adopts the crystal structure of the latter. Despite a completely random distribution of magnetic Fe within a nonmagnetic Cu matrix, murunskite exhibits a well-defined quarter-zone antiferromagnetic transition at 97 K and complete orbital order below 30 K. These findings reveal the unexpected emergence of long-range order in a high-entropy-like environment. This inherent robustness to site disorder in a layered structure makes murunskite a paradigmatic system for further studies. Here, we investigate doping strategies in murunskite to assess how its electronic and magnetic properties can be tuned. Using melt-growth techniques, we achieve substitutions at the magnetic metal site (Fe), spacer cation (K), and sulfur ligand (S), which significantly influence transport and magnetic properties. In addition, we use ionic-liquid gating on the parent compound and observe a gate-dependent suppression of resistivity, confirming the potential for electrostatic control over transport. Our results demonstrate the chemical and electronic plasticity of murunskite, offering a valuable platform for co-engineering disorder, magnetism, and transport, and opening avenues to explore quantum phenomena in correlated and high-entropy materials.