Murunskite (K₂FeCu₃S₄) is a layered sulfosalt chalcogenide that occupies a unique position between the cuprate and iron pnictide families: it shares electronic characteristics with the former and adopts the crystal structure of the latter. Despite a completely random distribution of magnetic Fe within a nonmagnetic Cu matrix, murunskite exhibits a well-defined quarter-zone antiferromagnetic transition at 97 K and complete orbital order below 30 K. These findings reveal the unexpected emergence of long-range order in a high-entropy-like environment. This inherent robustness to site disorder in a layered structure makes murunskite a paradigmatic system for further studies. Here, we investigate doping strategies in murunskite to assess how its electronic and magnetic properties can be tuned. Using melt-growth techniques, we achieve substitutions at the magnetic metal site (Fe), spacer cation (K), and sulfur ligand (S), which significantly influence transport and magnetic properties. In addition, we use ionic-liquid gating on the parent compound and observe a gate-dependent suppression of resistivity, confirming the potential for electrostatic control over transport. Our results demonstrate the chemical and electronic plasticity of murunskite, offering a valuable platform for co-engineering disorder, magnetism, and transport, and opening avenues to explore quantum phenomena in correlated and high-entropy materials.