With the rapid development of conductive polymers, they have shown great potential in room-temperature chemical gas detection, as their electrical conductivity can be changed upon exposure to oxidative or reductive gas molecules at room temperature. However, due to their relatively low conductivity and high affinity toward volatile organic compounds and water molecules, they always exhibit low sensitivity, poor stability, and gas selectivity, which hinder their practical gas sensor applications. In addition, inorganic sensitive materials show totally different advantages in gas sensors, such as high sensitivity, fast response to low concentration analytes, high surface area, and versatile surface chemistry, which could complement the conducting polymers in terms of the sensing characteristics. It seems to be a win-win choice to combine inorganic sensitive materials with polymers for gas detection due to their synergistic effects, which has attracted extensive interests in gas-sensing applications. In this review, we summarize the recent development in polymer-inorganic nanocomposite based gas sensors. The roles of inorganic nanomaterials in improving the gas-sensing performances of conducting polymers are introduced and the progress of conducting polymer-inorganic nanocomposites including metal oxides, metal, carbon (carbon nanotube, graphene), and ternary composites are presented. Finally, a conclusion and a perspective in the field of gas sensors incorporating conducting polymer-inorganic nanocomposite are summarized. Graphical Abstract

Metasurface-based near perfect absorbers exhibit a wide range of potential applications in the fields of solar energy harvesting, thermal images and sensors due to their unique absorption regulation function. However, absorption characteristics of devices are locked by the device structure, leading to the limitation in real-time dynamic applications. In this work, we integrate the phase change material VO₂ thin film into the metal-insulator-metal structured metasurface based absorber, and design a fully visible band switchable dynamically tunable absorber (DTA). By controlling the phase transition of VO₂, the DTA can realize a novel switch function in the full band of visible light (400 ∼ 780 nm), with absorption contrast ranges from 42% to 60%. Furthermore, via accurate structural parameter control, the vivid cyan, magenta, and yellow pixels based on the VO₂ DTA are designed and proposed in the real-time optical anti-counterfeiting, exhibiting outstanding characteristics of anti-glare interference and real-time encryption ability. The absorption spectrum and local electric field are simulated and analyzed to study the internal operation mechanism of DTA. The dynamic absorption adjustable function is attributed to the synergistic effect of insulator-metal transition of VO₂ and Fabry–Pérot resonance of absorber.

In this paper, the properties of hybrid-phase microstructural indium tin oxide-stabilized ZnO thin films and the relevant high-performance thin-film transistors (TFTs) were systematically investigated. The optically extracted Urbach energy revealed that such thin films owned less band-tail state trapping in comparison with that of the corresponding amorphous thin films. This was determined by better atomic arrangement and might realize higher drift mobility theoretically. The influence of deposition parameters such as oxygen partial pressure ratio (P _O2 ) and direct-current power (PDC) on thin films was discussed in detail. Then, the TFTs with optimal co-sputtering conditions were fabricated. Such devices exhibited a typical field-effect mobility of 26.1 cm ² /V·s, threshold voltage of 0.5 V, on-off ratio of over 10 ⁹ , and extremely low subthreshold swing of 89 mV/decade. Meanwhile, the spatial uniformity, air stability, and repeated switching behavior of devices were demonstrated to be excellent.

In this letter, degradation of InSnZnO thin-film transistors (TFTs) under positive bias stress (PBS) is evaluated by low frequency noise (LFN) measurement for the first time. With PBS time, the LFN level and trap state density first decrease and then increase, and meanwhile, the dominant fluctuation model changes from carrier number fluctuation model toward to bulk carrier mobility fluctuation model. By considering the interactions of oxygen vacancies, hydrogens and electrons, a degradation model based on the effect of vertical electrical field and water ionization is tentatively proposed and discussed.