Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work. The microstructure and optical properties of ITZO thin films at different annealing temperatures were analyzed. The impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated as well. It was found that ITZO TFT with annealing temperature of 300 °C exhibits excellent electrical performance with a high saturation field-effect mobility (μ_sat) of 27.4 cm² V⁻¹ s⁻¹, a low threshold voltage (V_th) of −0.64 V, a small subthreshold swing (SS) value of 0.23 V per decade, and the high on-off current ratio (I_on/I_off) of 1.8 × 10⁷. In addition, it also shows good output curves including gate control capabilities and good electrode contact as well as extreme atmospheric stability. As shown by photoluminescence (PL) analysis and X-ray photoelectron spectroscopy (XPS) analysis, the beneficial effects of various annealing temperatures on device performance are attributed to the reorganization of the amorphous network and the control of defect chemistry in the films. The correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.

In this paper, the properties of hybrid-phase microstructural indium tin oxide-stabilized ZnO thin films and the relevant high-performance thin-film transistors (TFTs) were systematically investigated. The optically extracted Urbach energy revealed that such thin films owned less band-tail state trapping in comparison with that of the corresponding amorphous thin films. This was determined by better atomic arrangement and might realize higher drift mobility theoretically. The influence of deposition parameters such as oxygen partial pressure ratio (P _O2 ) and direct-current power (PDC) on thin films was discussed in detail. Then, the TFTs with optimal co-sputtering conditions were fabricated. Such devices exhibited a typical field-effect mobility of 26.1 cm ² /V·s, threshold voltage of 0.5 V, on-off ratio of over 10 ⁹ , and extremely low subthreshold swing of 89 mV/decade. Meanwhile, the spatial uniformity, air stability, and repeated switching behavior of devices were demonstrated to be excellent.

Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with phosphorusdoped source/drain regions are developed in this letter. The resulting a-IGZO TFT exhibits high thermal stability and good electrical performance, including field-effect mobility of 5 cm²/V · s, a threshold voltage of 5.6 V, a subthreshold swing of 0.5 V/dec, and an on/off current ratio of 6 × 10⁷. With scaling down of the channel length, good characteristics are also obtained with a small shift in the threshold voltage and no degradation in the subthreshold swing.

Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those with S/D regions doped by hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm²/V·s, threshold voltage of 3.5 V, subthreshold swing of 0.5 V/dec, and on/off current ratio of 9 ×10⁷.

In this article, we report continuous and large-area molybdenum disulfide (MoS₂) growth on a SiO₂/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS₂ film was synthesized using a two-step method. In the first step, a thin MoS₂ film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS₂ film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS₂ by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS₂ are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS₂ layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS₂ on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.

Low-frequency noise (LFN) is investigated in a set of indium-zinc-oxide thin-film transistors (IZO TFTs) with fixed channel width (W=10 μm) and different channel lengths (L=10, 20, 30 and 40 μm) from sub-threshold, linear to saturation regions. The drain current noise power spectral density is measured as a function of effective gate voltage and drain current. The variation slopes of normalized noise with effective gate voltage are in the range of -1.27 and -1.48, which are close to the prediction of the mobility fluctuation mechanism. According to the N-μ model, the flat-band voltage noise spectral density and coulomb scattering coefficient are extracted. Subsequently, variations of noise with the drain current in the above threshold region are analyzed by considering the band-gap distribution of the tail states. Finally, the BSIM model is also used to model 1/f noise in the IZO TFTs. The noise parameter NOIB is extracted which is inversely proportional to the effective gate voltage. Good agreements are achieved between the simulated and measured results in the linear region.