Antonio Di Bartolomeo

Prof. Antonio Di Bartolomeo

University of Salerno, Physics Department

Research Focus & Metrics

Academic Career Length

68Years (1959-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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23 October 2017 in 2D Materials
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Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
LGLuca Genovese
Luca Genovese
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
LILaura Iemmo
Laura Iemmo
GLGiuseppe Luongo
Giuseppe Luongo
MSMarika Schleberger
Marika Schleberger
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS 2 /SiO 2 interface. We conclude that intrinsic defects in MoS 2 , such as S vacancies, which result in effective positive charge trapping, play an important role, besides H 2 O and O 2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.

1 August 2017 in Progress in Surface Science
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Journal Article
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Filippo GiubileoFilippo Giubileo
Filippo Giubileo
Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo

4 May 2017 in Nanotechnology
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Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
LGLuca Genovese
Luca Genovese
TFTobias Foller
Tobias Foller
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
GLGiuseppe Luongo
Giuseppe Luongo
MSMarika Schleberger
Marika Schleberger
We study electrical transport properties in exfoliated molybdenum disulfide (MoS 2 ) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10 4 s, due to photo-charge trapping at the MoS 2 /SiO 2 interface and in MoS 2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 k Ω μ m − 1 , ON current as high as 1.25 nA μ m − 1 , 10 5 ON–OFF ratio, mobility of ∼1 cm 2 V −1 s −1 and photoresponsivity ℛ ≈ 1 A W − 1 .

1 May 2011 in Carbon
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LGL. Guadagno
L. Guadagno
BVB. De Vivo
B. De Vivo
Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
Patrizia LambertiPatrizia Lamberti
Patrizia Lamberti
Andrea SorrentinoAndrea Sorrentino
Andrea Sorrentino
VVV. Vittoria
V. Vittoria

21 May 2018 in Advanced Functional Materials
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Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
AGAlessandro Grillo
Alessandro Grillo
Francesca UrbanFrancesca Urban
Francesca Urban
LILaura Iemmo
Laura Iemmo
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
LALay-Kee Ang
Lay-Kee Ang