A novel semi-insulating Co:β-Ga2O3 single crystal was designed and grown; the Co:β-Ga2O3-based device is endowed with great operating stability at high temperatures and under extreme conditions.
The β-Ga 2 O 3 (011) plane could be a potential substrate orientation for power devices because it avoids a kind of dislocation which leads to leakage current and breakdown of power devices as the dislocations propagate parallel to the (011) plane.
Broadband NIR fluorescence spectra of the Cr 3+ :β-Ga 2 O 3 crystal and high-brightness broadband NIR LED. Real-time monitoring of human health and food safety through broadband NIR LED based on Cr 3+ :β-Ga 2 O 3 crystal.
1 December 2021 in Journal of Alloys and Compounds