We have investigated the As-doping effect in the newly discovered kagome superconductor ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$ via measurements of x-ray diffraction, electrical resistivity, magnetic susceptibility, and specific heat. Our results show that partial substitution of Sb with As leads to shrinkage of the $c$ lattice, which effectively applies a chemical pressure in the system. The solubility of As atoms is about $2.3\%$ for single crystals grown by the self-flux method. In the As-doped single crystal ${\mathrm{CsV}}_3{\left({\mathrm{Sb}}_{0.977}{\mathrm{As}}_{0.023}\right)}_5$, the charge-density-wave (CDW) transition temperature $T_{\mathrm{CDW}}$ is suppressed from 94 to 83 K, and the superconducting transition temperature $T_{\mathrm{c}}$ is enhanced from 2.5 to 3.6 K. Furthermore, the residual resistivity ratio is significantly reduced, and the magnetoresistance with magnetic field along the $c$ axis decreases by nearly one order of magnitude, indicating substantial disorder scattering induced by the As doping. The anomalous Hall effect (AHE) is only observed below $T_{\mathrm{CDW}}$, indicating the intimate relationship between CDW and AHE. We found that the As-doping effect on $T_{\mathrm{c}}$ and $T_{\mathrm{CDW}}$ is basically equivalent to the hydrostatic pressure effect at 0.2 GPa.

This article addresses the knowledge gap regarding the effect of Ti addition on the microstructure and corrosion behavior of the LMD-processed GH3536 alloy in a simulated solution of proton exchange membrane fuel cells (PEMFCs). The microstructural evolution, corrosion resistance, and passive film characteristics of LMD-processed GH3536 alloy with varying Ti contents were characterized through a variety of techniques, including scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), electron backscatter diffraction (EBSD), X-ray photoelectron spectroscopy (XPS), and a series of electrochemical measurements. The results indicate that the corrosion resistance of the LMD-processed GH3536 alloy significantly improves with increasing Ti content. However, when the Ti content exceeds 0.2 wt.%, the beneficial effect on corrosion resistance is weakened. Two primary mechanisms explain the enhanced corrosion resistance, involving the heterogeneous nucleation of Ti-modified Al₂O₃ and Ti solute segregation, which promotes grain refinement. In addition, grain refinement can provide more active sites for the formation of compact passive films, thereby improving corrosion resistance of the GH3536 alloy.

We report a possible coexistence of nontrivial topology and antiferromagnetism in the newly discovered compounds EuCdBi${}_2$, with magnetic Eu layer locating above and below Bi square net. The X-ray diffraction on single crystals and powder indicats that this 112-type material crystalizes in space group of $I4/mmm$, the same as SrMnBi${}_2$ and EuMnBi${}_2$. Our combined measurements of magnetization, electrical transport and specific heat consistently reveal antiferromagnetic (AFM) transition of Eu${}^{2+}$ moments at $T_N$ = 20 K. The Eu moments are not saturated under a field of 7 T at 1.8 K. The anisotropic susceptibility suggests the Eu moments lie in the $ab$ plane, and a metamagnetic (MM) transition is observed near 1 T below $T_N$. Large positive magnetoresistance (MR) present for both $H\Vert ab$ and $H\Vert c$, which are considered to contain part contributions from Dirac bands. Hall measurements show the electron-hole compensation effect is prominent above 100 K, with a crossover of Hall resistance from negative to positive values at ∼150 K. The fitted mobility of electrons is as high as 3250 cm${}^2$ V${}^{-1}$ S${}^{-1}$ at 1.8 K. Interestingly, the rapid increase of carrier density and suppression of mobility appear at around $T_N$, indicating non-negligible interaction between Eu moments and electron/hole bands. EuCdBi${}_2$ may provide a new platform to investigate the interplay of topological bands and antiferromagnetic order.

We report the physical properties of ThRu$_3$Si$_2$ featured with distorted Ru kagome lattice. The combined experiments of resistivity, magnetization and specific heat reveal bulk superconductivity with $T_{\rm{c}}$ = 3.8 K. The specific heat jump and calculated electron-phonon coupling indicate a moderate coupled BCS superconductor. In comparison with LaRu$_3$Si$_2$, the calculated electronic structure in ThRu$_3$Si$_2$ shows an electron-doping effect with electron filling lifted from 100 meV below flat bands to 300 meV above it. This explains the lower superconducting transition temperature and weaker electron correlations observed in ThRu$_3$Si$_2$. Our work suggests the $T_{\rm{c}}$ and electronic correlations in kagome superconductor could have intimate connection with the flat bands.