GeTe-Based materials have great potential to be used in thermoelectric generators for waste heat recovery due to their excellent thermoelectric performance, but their module research is greatly lagging behind material research. In this work, we successfully fabricate a GeTe-based thermoelectric module and report a high energy conversion efficiency of 7.8% under a temperature gradient of 500 K. An Sb-, Bi-, and Se-doped GeTe-based material, with a chemical composition of Ge_0.92Sb_0.04Bi_0.04Te_0.95Se_0.05 and a peak ZT of 2.0 at 700 K, is used to make the p-type legs in the module. By using a high-throughput strategy, Mo is screened from 12 pure metals as an effective diffusion barrier material between the GeTe-based material and the electrode. Based on the optimal geometry predicted by three-dimensional numerical analysis, one eight-couple Ge_0.92Sb_0.04Bi_0.04Te_0.95Se_0.05/Yb_0.3Co₄Sb₁₂ TE module is fabricated and evaluated, which shows a comparable energy conversion efficiency with those of skutterudite- and half-Heusler-based modules in a similar temperature range. This study opens the door for the development of GeTe-based modules.

A modified HTP synthesis method and an automated histogram analysis technique are developed to screen the new stable ternary CTS compound Cu₇Sn₃S₁₀.

A maximum ZT of 1.25 at 400 K and an average ZT value of approximately 1.03 between 300 and 600 K were achieved in Ag_0.002Bi_0.5Sb_1.498Te₃ by successfully suppressing the intrinsic excitation.

Recently, a deformable and ductile inorganic semiconductor Ag₂S has attracted intense attention due to its potential application in self-powered wearable and hetero-shaped electronics. However, the thermoelectric figure of merit (zT) of Ag₂S is greatly limited by its extremely low carrier concentration. In this study, via doping I into Ag₂S-based materials, we tune the carrier concentration into the optimal range as well as suppressing the lattice thermal conductivity. A maximum zT value of 0.26 is achieved for Ag₂S_0.7Se_0.295I_0.005 at 300 K, about three times higher than the matrix compound. More importantly, doping I has little effect on the ductility and deformability of Ag₂S-based materials. Our study shows that I-doped Ag₂S-based materials are good candidates for developing flexible thermoelectric technologies.

Through doping Br in Cu ₇ Sn ₃ S ₁₀ , a peak zT around unity at 750 K has been achieved, which is a record-high value in Cu–Sn–S ternary TE compounds. This study promises a new thermoelectric material for application in the middle temperature range.