This article describes a closed-loop detection MEMS accelerometer for acceleration measurement. This paper analyzes the working principle of MEMS accelerometers in detail and explains the relationship between the accelerometer zero bias, scale factor and voltage reference. Therefore, a combined compensation method is designed via reference voltage source compensation and terminal temperature compensation of the accelerometer, which comprehensively improves the performance over a wide temperature range of the accelerometer. The experiment results show that the initial range is reduced from 3679 ppm to 221 ppm with reference voltage source compensation, zero-bias stability of the accelerometer over temperature is increased by 14.3% on average and the scale factor stability over temperature is increased by 88.2% on average. After combined compensation, one accelerometer zero-bias stability over temperature was reduced to 40 μg and the scale factor stability over temperature was reduced to 16 ppm, the average value of the zero-bias stability over temperature was reduced from 1764 μg to 36 μg, the average value of the scale factor stability over temperature was reduced from 2270 ppm to 25 ppm, the average stability of the zero bias was increased by 97.96% and the average stability of the scale factor was increased by 98.90%.

Disc gyroscope manufactured through microelectromechanical systems (MEMS) fabrication processes becomes one of the most critical solutions for achieving high performance. Some reported novel disc constructions acquire good performance in bias instability, scale factor nonlinearity, etc. However, antivibration characteristics are also important for the devices, especially in engineering applications. For multi-ring structures with central anchors, the out-of-plane motions are in the first few modes, easily excited within the vibration environment. The paper presents a multi-ring gyro with good dynamic characteristics, operating at the first resonant mode. The design helps obtain better static performance and antivibration characteristics with anchor points outside of the multi-ring resonator. According to harmonic experiments, the nearest interference mode is located at 30,311 Hz, whose frequency difference is 72.8% far away from working modes. The structures were fabricated with silicon on insulator (SOI) processes and wafer-level vacuum packaging, where the asymmetry is 780 ppm as the frequency splits. The gyro also obtains a high Q-factor. The measured value at 0.15 Pa was 162 k, which makes the structure have sizeable mechanical sensitivity and low noise.

This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO₂ bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO₂ anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively.