Fast phase change with no preconditions: Random access memory (RAM) devices that rely on phase changes are primarily limited by the speed of crystallization. Rao et al. combined theory with a simple set of selection criteria to isolate a scandium-doped antimony telluride (SST) with a subnanosecond crystallization speed (see the Perspective by Akola and Jones). They synthesized SST and constructed a RAM device with a 700-picosecond writing speed. This is an order of magnitude faster than previous phase-change memory devices and competitive with consumer dynamic access, static random access, and flash memory. Science , this issue p. 1423 ; see also p. 1386

Getting more bits out of PCRAM: Phase-change random access memory (PCRAM) has the ability to both store and process information. It also suffers from noise and electrical drift due to damage that accumulates during the cycling process. Ding et al. developed a phase-change heterostructure where a phase-change material is separated by a confinement material, creating an alternating stack (see the Perspective by Gholipour). This architecture results in ultralow noise, lower drift, and stable multilevel storage capacity, which are potentially useful for new forms of computing. Science , this issue p. 210 ; see also p. 186

Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge₂Sb₂Te₅, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure changes around the Al atoms based onab initiosimulations and nuclear magnetic resonance evidences. By comparing the local chemical environments around Al atoms in respective amorphous and crystalline Al-Sb-Te phases, we believe that Al-centered motifs undergo reversible tetrahedron-octahedron reconfigurations in phase transition process. Such Al-centered local structure rearrangements significantly enhance thermal stability of amorphous phase compared to that of undoped Sb-Te materials and facilitate a low-energy amorphization due to the weak links among Al-centered and Sb-centered octahedrons. Our studies may provide a useful reference to further understand the underlying physics and optimize performances of all IIIA metal doped Sb-Te phase change materials, prompting the development of NOR/NAND Flash-like phase change memory technology.