Porous pure SnO₂ nanofibers (NFs) and La₂O₃ nanoparticles (NPs)-embedded porous SnO₂ NFs were successfully synthesized via electrospinning followed by calcination. These materials were systematically evaluated as gas-sensing elements in metal-oxide-semiconductor (MOS) sensors. The La₂O₃ NPs embedded in porous SnO₂ NFs demonstrated superior gas-sensing performance compared to pure SnO₂ NFs. Specifically, the incorporation of La₂O₃ resulted in a 12-fold enhancement in gas-sensing response towards ethanol, significantly improving both sensitivity and selectivity by tuning the carrier concentration and modifying oxygen deficiencies and chemisorbed oxygen levels. Thus, La₂O₃ NPs embedded in SnO₂ NFs present a promising strategy for the development of high-performance ethanol gas sensors.

Resistive switching (RS) memory devices are gaining recognition as data storage devices due to the significant interest in their switching material, Halide perovskite (HP). The electrical characteristics include hysteresis in its current–voltage (I–V) relationship. It can be attributed to the production and migration of defects. This property allows HPs to be used as RS materials in memory devices. However, 3D HPs are vulnerable to moisture and the surrounding environment, making their devices more susceptible to deterioration. The potential of two-dimensional (2D)/quasi-2D HPs for optoelectronic applications has been recognized, making them a viable alternative to address current restrictions. Two-dimensional/quasi-2D HPs are created by including extended organic cations into the ABX₃ frameworks. By adjusting the number of HP layers, it is possible to control the optoelectronic properties to achieve specific features for certain applications. This article presents an overview of 2D/quasi-2D HPs, including their structures, binding energies, and charge transport, compared to 3D HPs. Next, we discuss the operational principles, RS modes (bipolar and unipolar switching), in RS memory devices. Finally, there have been notable and recent breakthroughs in developing RS memory systems using 2D/quasi-2D HPs.