Using $e^{+}{e}^{-}\to \mathrm{\text{hadrons}}$ data collected with the CLEO-III detector at the Cornell Electron Storage Ring, we study the inclusive production of baryons/antibaryons $(p,\Lambda )$ and mesons ($\varphi$ and $f_2(1270)$) in gluon-fragmentation and quark-fragmentation processes. We first corroborate previous per-event total particle yields in ${\rm Y}(1\mathrm{S})\to ggg$ compared with nearby continuum ($e^{+}{e}^{-}\to q\overline{q}$) indicating greater ($\sim \times 2$) per-event yields of baryons in 3-gluon fragmentation. We find similar results when we extend that comparison to include the ${\rm Y}(2\mathrm{S})$ and ${\rm Y}(3\mathrm{S})$ resonances. With higher statistics, we now also probe the momentum dependence of these per-event particle yields. Next, we compare particle production in the photon-tagged process ${\rm Y}(1\mathrm{S})\to gg\gamma$ with that in $e^{+}{e}^{-}\to q\overline{q}\gamma$ events, to allow comparison of two-parton with three-parton particle-specific fragmentation. For each particle, we determine the “enhancement” ratio, defined as the ratio of particle yields per gluon-fragmentation event compared to quark-fragmentation event. Thus defined, an enhancement of 1.0 implies equal per-event production in gluon and quark fragmentation. In the photon-tagged analysis (${\rm Y}(1\mathrm{S})\to gg\gamma$ compared to $e^{+}{e}^{-}\to q\overline{q}\gamma$), we find almost no enhancement for protons ($\sim 1.2\pm 0.1$), but a significant enhancement ($\sim 1.9\pm 0.3$) for $\Lambda$’s. This small measured proton enhancement rate is supported by a study of baryon production in ${\chi }_{b2}\to gg\to p+X$ relative to ${\chi }_{b1}\to q\overline{q}g\to p+X$. Overall, per-event baryon production in radiative two-gluon fragmentation is somewhat smaller than that observed in three-gluon decays of the ${\rm Y}(1\mathrm{S})$. Our results for baryon production are inconsistent with the predictions of the JETSET (7.3) fragmentation model.

Lead-based halide perovskite semiconductors have demonstrated considerable potential in optoelectronic applications. However, the lack of high-quality crystals suitable for research has led to rare reports on CsPbF₃ single crystals. Good quality CsPbF₃ single crystals were successfully grown using the Bridgman method. The structure, luminescence, and electrical properties of crystals were investigated. At room temperature, the crystal structure was determined to be cubic perovskite, with a calculated bandgap of 3.68 eV. The measured emission spectrum showed one broad emission peak at approximately 400 nm. Three decay time constants were obtained from a sum of exponential functions fit to the fluorescence decay curve: 0.4 ns, 2.4 ns, and 15.0 ns for fast, middle, and slow decay times, respectively. The decay times excited by pulsed X-ray were measured to be 2.2 ns and 10.2 ns, indicating that CsPbF₃ is an ultrafast scintillator. Furthermore, the electrical properties demonstrated that CsPbF₃ exhibits high ion mobility, which is approximately 20 times that of electron mobility.

Due to its ultrafast cross-luminescence, the BaF ₂ crystals with a subnanosecond decay time are promising for high-reputation radiation detection. However, there is a slow scintillation component with a decay time of about 600 ns in the crystal, which induces a pile-up effect. The Y doping in the crystal was confirmed to be effective in slow component suppression. In this investigation, the fast/total (F/T) light yield (LY) ratios and fast component LY of BaF ₂ :Y crystals with various Y concentrations were investigated by the fast sampling technique. It was demonstrated that Y doping not only suppresses the slow component but also weakens the fast component. A good negative correlation was observed between the F/T LY ratios and fast component LY of BaF ₂ :Y crystals, indicating that it was impossible to obtain the BaF ₂ :Y crystal with a high F/T LY ratio and a high fast component LY at the same time. The influence of wrapping materials on the F/T LY ratio was also investigated. The result illustrates that both the undoped and Y-doped BaF ₂ crystals without wrapping materials show the best F/T LY ratio, indicating that the tradeoff between LY and F/T LY ratio is needed in the applications.

A high-quality CsPbBr₃ crystal of Φ 50 mm × 80 mm with uniform and crack-free appearance was successfully grown by the vertical Bridgman method, and the anisotropic optoelectronic properties of the crystals were studied.