As a renewable and sustainable energy source and an alternative to fossil fuels, solar-driven water splitting with photoelectrochemical (PEC) cell is a promising approach to obtain hydrogen fuel with its near-zero carbon emission pathway by transforming incident sunlight, the most abundant energy source. Because of its importance and future prospects, a number of architectures with their own features have been formed by various synthesis and growth methods. Because the materials themselves are one of the most dominant components, they determine the solar-to-hydrogen efficiency of the PEC cells. Thus, several representative PEC cells were reviewed by categorizing them as per synthesis and/or growth methods such as physical vapor deposition, chemical vapor deposition, electrochemical deposition, etc. This review provides researchers with an overview and acts as a guide for research on solar-driven water splitting PEC cells.

In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report a highly sensitive, self-powered, and hybrid GaN NR/graphene/Si (111) PD with a relatively large 100 mm² active area, a high responsivity of 17.4 A/W, a high specific detectivity of 1.23 × 10¹³ Jones, and fast response speeds of 13.2/13.7 μs (20 kHz) under a UV light of 355 nm at zero bias voltage. The results show that the thin graphene acts as a perfect interface for GaN NRs, encouraging growth with minimum defects on the Si substrate. Our results suggest that the GaN NR/graphene/Si (111) heterojunction has a range of interesting properties that make it well-suited for a variety of photodetection applications.

We propose a tunable dual-wavelength absorption (TDWA) switch based on an asymmetric guided mode resonance (AGMR) structure. A TDWA switch consists of a graphene layer and an AGMR structure sandwiched by cap and slab layers on a buffer/silicon substrate. The AGMR structure adds a smaller grating unit cell next to a larger one, exciting a second resonance close to but distinct from the first resonance. For switching, the TDWA between an absorptive or reflective mode with each on-/off-state, the chemical potential of graphene is tuned from 0.0 eV to 0.6 eV. For the absorptive mode, two absorption peaks of ≥ 96.2% are separated by 23 nm, both having an on-off ratio of ∼15.52. For the reflective mode, two reflectance peaks of ≥ 93.8% are separated by 23 nm, having on-off ratios of 15.56 dB and 18.95 dB. The maximum on-off ratios of 39.98 dB and 34.55 dB are achieved near the reflectance peaks. Both the period of the AGMR and the cap thickness alters the two peak wavelengths linearly, while the grating width of the AGMR varies nonlinearly from 17 nm to 28 nm. The buffer excites a weak Fabry-Perot resonance, which interacts with the TDWA structure, the result of which is the two absorption peaks are varied. Finally, as the incidence angle of light increases up to 5.3°, the distance of the two peak wavelengths is tuned from ∼22 nm to ∼77 nm with ≥ 96% absorption or ≥ 93% reflectance in each mode.

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of the topological semimetal $\mathrm{C}{\mathrm{d}}_3\mathrm{A}{\mathrm{s}}_2$, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to constraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched $\mathrm{Z}{\mathrm{n}}_x\mathrm{C}{\mathrm{d}}_{1-x}\mathrm{Te}$ buffer layers, miscut substrates, and broadband illumination to study how dislocations, twins, and point defects influence the electron mobility of $\mathrm{C}{\mathrm{d}}_3\mathrm{A}{\mathrm{s}}_2$. A combination of defect suppression approaches produces $\mathrm{C}{\mathrm{d}}_3\mathrm{A}{\mathrm{s}}_2$ epilayers with electron mobilities upwards of $15000\mathrm{c}{\mathrm{m}}^2/\mathrm{V}\mathrm{s}$ at room temperature.