The development of infrared photodetectors is mainly limited by the choice of available materials and the intricate crystal growth process. Moreover, thermally activated carriers in traditional III–V and II–VI semiconductors enforce low operating temperatures in the infrared photodetectors. Here we demonstrate infrared photodetection enabled by interlayer excitons (ILEs) generated between tungsten and hafnium disulfide, WS₂/HfS₂. The photodetector operates at room temperature and shows an even higher performance at higher temperatures owing to the large exciton binding energy and phonon-assisted optical transition. The unique band alignment in the WS₂/HfS₂ heterostructure allows interlayer bandgap tuning from the mid- to long-wave infrared spectrum. We postulate that the sizeable charge delocalization and ILE accumulation at the interface result in a greatly enhanced oscillator strength of the ILEs and a high responsivity of the photodetector. The sensitivity of ILEs to the thickness of two-dimensional materials and the external field provides an excellent platform to realize robust tunable room temperature infrared photodetectors.

High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity. Meanwhile, two-dimensional (2D) semimetal materials with unique zero-bandgap structures are constrained by the bottleneck of intrinsic quantum efficiency. Here, we report a near-mid infrared ultra-miniaturized graphene photodetector with configurable 2D potential well. The 2D potential well constructed by dielectric structures can spatially (laterally and vertically) produce a strong trapping force on the photogenerated carriers in graphene and inhibit their recombination, thereby improving the external quantum efficiency (EQE) and photogain of the device with wavelength-immunity, which enable a high responsivity of 0.2 A/W–38 A/W across a broad infrared detection band from 1.55 to 11 µm. Thereafter, a room-temperature detectivity approaching 1 × 10⁹cm Hz^1/2 W⁻¹ is obtained under blackbody radiation. Furthermore, a synergistic effect of electric and light field in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. Our strategy opens up alternative possibilities for easy fabrication, high-performance and multifunctional infrared photodetectors.

We experimentally demonstrated a polarization dependent state to polarization independent state change in terahertz (THz) metamaterials. This is accomplished by reconfiguring the lattice structure of metamaterials from 2-fold to 4-fold rotational symmetry by using micromachined actuators. In experiment, it measures resonance frequency shift of 25.8% and 12.1% for TE and TM polarized incidence, respectively. Furthermore, single-band to dual-band switching is also demonstrated. Compared with the previous reported tunable metamaterials, lattice reconfiguration promises not only large tuning range but also changing of polarization dependent states, which can be used in photonic devices such as sensors, optical switches, and filters.

We report a broadband terahertz (THz) polarizer exhibiting extremely high polarization extinction ratio and the method to fabricate it. The polarizer consists of a bilayer subwavelength Au wire-grid structure fabricated on Si substrate by one step etching and metal formation. The THz time domain spectroscopy (THz-TDS) measurement reveals an extremely high extinction ratio of 84.9 dB at 1.67 THz, close to the detection limit of THz-TDS system, and an average extinction ratio of 69.9 dB in 0.6–3 THz frequency range. The fabricated bilayer wire-grid polarizer shows greatly enhanced performance over conventional single layer wire-grid THz polarizer.