Telluriums (Te) with various nanostructures, including particles, wires, and sheets, are controllably synthesized by adjusting the content of polyvinylpyrrolidone (PVP) in a facile solvothermal reaction. Te nanostructures all have complete grain sizes with excellent crystallinity and mesopore structures. Further, the formation mechanisms of Te nanostructures are proposed to be that the primary nuclei of Te are released from the reduction of TeO₃²⁻ using N₂H₄·H₂O, and then grow into various nanostructures depending on the different content of PVP. These nanostructures of Te all exhibit the photocatalytic activities for the degradation of MB and H₂ production under visible light irradiation, especially Te nanosheets, which have the highest efficiencies of degradation (99.8%) and mineralization (65.5%) at 120 min. In addition, compared with pure Te nanosheets, the rate of H₂ production increases from 412 to 795 μmol∙h⁻¹∙g⁻¹ after the introduction of Pt, which increases the output by nearly two times. The above investigations indicate that Te with various nanostructures is a potential photocatalyst in the field of degradation of organic pollutants and H₂ fuel cells.

Groups III–V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5 min. Through temperature dependence photoluminescence (TDPL) and power dependence photoluminescence (PL) measurement, the peak located at the low-energy shoulder was confirmed to be localized state emission and the high energy one comes from free-carrier emission. Moreover, from the TDPL spectra of the sample annealed at 180 °C for 5 min, the full width at half maximum (FWHM) of localization state emission was nearly the same before which is 250 K and then decreased with increasing temperature. However, the FWHM was decreased significantly when temperature increased in the untreated sample. We conclude that the escape of localization states with increasing temperature contributes to this anomaly phenomenon. Our studies have significance on the application of QDs in electroluminescence devices and down-conversion light-emitting devices.