A white light non-scanning correlation interrogation system was proposed and built to interrogate absolute length of the air cavity of fiber-optic compound Fabry–Perot pressure sensors for the extraction of pressure value. By carefully choosing thickness range and tilt angle of the optical wedge used for cavity length matching, correlation interferometric signal of the basal cavity can be naturally filtered out. Based on peak positioning by Fourier transform, bandpass filtering in frequency domain, inverse Fourier transform back to time domain, envelope fitting and zero fringe finding through a gravity center method, cavity length can be determined with an accuracy of 0.04%. The system was used for the interrogation of a fiber-optic compound Fabry–Perot pressure sensor under different pressures. For a pressure range of 0.1~2.9 Mpa, the linear relationship between the air cavity length and the gas pressure imposed was successfully extracted.

This study presents an extrinsic Fabry–Perot interferometric (EFPI) fiber-optic strain sensor with a very short cavity. The sensor consists of two vertically cut standard single-mode fibers (SMFs) and a glass capillary with a length of several centimeters. The two SMFs penetrate into the glass capillary and are fixed at its two ends with the use of ultraviolet (UV) curable adhesives. Based on the use of the lengthy glass capillary sensitive element, the strain sensitivity can be greatly enhanced. Experiments showed that the microcavity EPFI strain sensor with initial cavity lengths of 20 μm, 30 μm, and 40 μm, and a capillary length of 40 mm, can yield respective cavity length–strain sensitivities of 15.928 nm/με, 25.281 nm/με, and 40.178 nm/με, while its linearity was very close to unity for strain measurements spanning a range in excess of 3500 με. Furthermore, the strain–temperature cross-sensitivity was extremely low.

MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.

We describe a simple but efficient technique to fabricate large-scale arrays of highly ordered silicon nanostructures. By coupling dual lithography using light of 351.1 nm wavelength with deep reactive ion etching (DRIE), silicon nanostructures of excellent regularity and uniform coverage were achieved. The proposed nanofabrication method not only simplified the nanofabrication process but also produced high-aspect-ratio (higher than 15) nanostructures. The scalloping problem was also controlled by regulating DRIE parameters. The process is rapid, cheap, examined to optimize the fabrication process, and has the potential to be scaled up to large areas. The contact angle of a water droplet atop the surface is larger than 15°. Moreover, by coupling black silicon process with DRIE-based microfabrication, three-dimensional nano/nano dual-scale structures which show robust and stable hydrophobicity have been achieved. This process opens new application possibilities in optical, photoelectric, microelectronic, catalytic and biomedical applications.

Antenna miniaturization technology has been a challenging problem in the field of antenna design. The demand for antenna miniaturization is even stronger because of the larger size of the antenna in the low-frequency band. In this paper, we consider MEMS magnetoelectric antennas based on mechanical resonance, which sense the magnetic fields of electromagnetic waves through the magnetoelectric (ME) effect at their mechanical resonance frequencies, giving a voltage output. A 70 μm diameter cantilever disk with SiO₂/Cr/Au/AlN/Cr/Au/FeGaB stacked layers is prepared on a 300 μm silicon wafer using the five-masks micromachining process. The MEMS magnetoelectric antenna showed a giant ME coefficient is 2.928 kV/cm/Oe in mechanical resonance at 224.1 kHz. In addition, we demonstrate the ability of this MEMS magnetoelectric antenna to receive low-frequency signals. This MEMS magnetoelectric antenna can provide new ideas for miniaturization of low-frequency wireless communication systems. Meanwhile, it has the potential to detect weak electromagnetic field signals.