The escalating heat flux density and temperature in highly integrated microelectronic devices adversely affect their reliability and service life, making efficient thermal management crucial for stable operation. This study utilizes Galinstan liquid metal as the coolant to investigate the flow and heat transfer performance in microchannel heat sinks incorporating various turbulator configurations. It is revealed that for microchannels featuring expanded regions, turbulators that create highly symmetric flow fields are preferable due to improved flow distribution. The long teardrop-shaped turbulator provides the best heat transfer performance among all the investigated heat transfer enhancement structures. And this turbulator yields a 13.8–25.9% higher enhancement effectiveness compared to other configurations, at the expense of a 28–41% increase in pressure loss. However, the sudden cross-sectional expansion in the expanded region causes a significant reduction in fluid velocity. Consequently, microchannels with expanded regions and turbulators exhibit a higher bottom surface temperature than the original, straight microchannels, leading to an overall deterioration in heat transfer performance.

This paper proposes a non-traditional inerter-based dynamic vibration absorber with negative stiffness (NSIDVA). Its optimal design is determined based on two widely used calibration strategies: the extended fixed-points technique and the stability maximization criterion, each suited respectively to harmonic and transient excitation. The superior performance of the proposed NSIDVA is demonstrated through a comparison with the non-traditional dynamic vibration absorber (DVA) and inerter-based DVA, revealing the benefits of incorporating negative stiffness into mechanical vibration absorbers for enhancing vibration attenuation in both steady-state and transient regimes. Finally, this paper establishes complete electromechanical analogies between piezoelectric shunt dampers and mechanical vibration absorbers (including the proposed NSIDVA), based on which high-performance mechanical vibration absorbers can be realized piezoelectrically, thereby facilitating their implementation in lightweight, space-restricted circumstances.