We report the self-assembly of an extensive inter-ligand hydrogen-bonding network of octylphosphonates on the surface of cesium lead bromide nanocrystals (CsPbBr₃ NCs). The post-synthetic addition of octylphosphonic acid to oleic acid/oleylamine-capped CsPbBr₃ NCs promoted the attachment of octylphosphonate to the NC surface, while the remaining oleylammonium ligands maintained the high dispersability of the NCs in non-polar solvent. Through powerful 2D solid-state ³¹P–¹H NMR, we demonstrated that an ethyl acetate/acetonitrile purification regime was crucial for initiating the self-assembly of extensive octylphosphonate chains. Octylphosphonate ligands were found to preferentially bind in a monodentate mode through P–O⁻, leaving polar PO and P–OH groups free to form inter-ligand hydrogen bonds. The octylphosphonate ligand network strongly passivated the nanocrystal surface, yielding a fully-purified CsPbBr₃ NC ink with PLQY of 62%, over 3 times higher than untreated NCs. We translated this to LED devices, achieving maximum external quantum efficiency and luminance of 7.74% and 1022 cd m⁻² with OPA treatment, as opposed to 3.59% and 229 cd m⁻² for untreated CsPbBr₃ NCs. This represents one of the highest efficiency LEDs obtained for all-inorganic CsPbBr₃ NCs, accomplished through simple, effective passivation and purification processes. The robust binding of octylphosphonates to the perovskite lattice, and specifically their ability to interlink through hydrogen bonding, offers a promising passivation approach which could potentially be beneficial across a breadth of halide perovskite optoelectronic applications.

Pressure coupled with shear stresses are the critical external factors for diabetic foot ulceration assessment and prevention. To date, a wearable system capable of measuring in-shoe multi-directional stresses for out-of-lab analysis has been elusive. The lack of an insole system capable of measuring plantar pressure and shear hinders the development of an effective foot ulcer prevention solution that could be potentially used in a daily living environment. This study reports the development of a first-of-its-kind sensorised insole system and its evaluation in laboratory settings and on human participants, indicating its potential as a wearable technology to be used in real-world applications. Laboratory evaluation revealed that the linearity error and accuracy error of the sensorised insole system were up to 3% and 5%, respectively. When evaluated on a healthy participant, change in footwear resulted in approximately 20%, 75% and 82% change in pressure, medial–lateral and anterior–posterior shear stress, respectively. When evaluated on diabetic participants, no notable difference in peak plantar pressure, as a result of wearing the sensorised insole, was measured. The preliminary results showed that the performance of the sensorised insole system is comparable to previously reported research devices. The system has adequate sensitivity to assist footwear assessment relevant to foot ulcer prevention and is safe to use for people with diabetes. The reported insole system presents the potential to help assess diabetic foot ulceration risk in a daily living environment underpinned by wearable pressure and shear sensing technologies.

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10⁶–10⁸. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10⁷ over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RMs.

Two‐terminal memristor has emerged as one of the most promising neuromorphic artificial electronic devices for their structural resemblance to biological synapses and ability to emulate many synaptic functions. In this work, a memristor based on the back‐end‐of‐line (BEOL) material silicon carbide (SiC) is developed. The thin film memristors demonstrate excellent binary resistive switching with compliance‐free and self‐rectifying characteristics which are advantageous for the implementation of high‐density 3D crossbar memory architectures. The conductance of this SiC‐based memristor can be modulated gradually through the application of both DC and AC signals. This behavior is demonstrated to further emulate several vital synaptic functions including paired‐pulse facilitation (PPF), post‐tetanic potentiation (PTP), short‐term potentiation (STP), and spike‐rate‐dependent plasticity (SRDP). The synaptic function of learning‐forgetting‐relearning processes is successfully emulated and demonstrated using a 3 × 3 artificial synapse array. This work presents an important advance in SiC‐based memristor and its application in both memory and neuromorphic computing.