Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025–1 μm ³ volumes, approximately 10 ⁶ times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms.

Two‐terminal memristor has emerged as one of the most promising neuromorphic artificial electronic devices for their structural resemblance to biological synapses and ability to emulate many synaptic functions. In this work, a memristor based on the back‐end‐of‐line (BEOL) material silicon carbide (SiC) is developed. The thin film memristors demonstrate excellent binary resistive switching with compliance‐free and self‐rectifying characteristics which are advantageous for the implementation of high‐density 3D crossbar memory architectures. The conductance of this SiC‐based memristor can be modulated gradually through the application of both DC and AC signals. This behavior is demonstrated to further emulate several vital synaptic functions including paired‐pulse facilitation (PPF), post‐tetanic potentiation (PTP), short‐term potentiation (STP), and spike‐rate‐dependent plasticity (SRDP). The synaptic function of learning‐forgetting‐relearning processes is successfully emulated and demonstrated using a 3 × 3 artificial synapse array. This work presents an important advance in SiC‐based memristor and its application in both memory and neuromorphic computing.

Low temperature ionic conducting materials such as OH⁻ and H⁺ ionic conductors are important electrolytes for electrochemical devices. Here we show the discovery of mixed OH⁻/H⁺ conduction in ceramic materials. SrZr_0.8Y_0.2O_3-δ exhibits a high ionic conductivity of approximately 0.01 S cm⁻¹ at 90 °C in both water and wet air, which has been demonstrated by direct ammonia fuel cells. Neutron diffraction confirms the presence of OD bonds in the lattice of deuterated SrZr_0.8Y_0.2O_3-δ. The OH⁻ ionic conduction of CaZr_0.8Y_0.2O_3-δ in water was demonstrated by electrolysis of both H₂¹⁸O and D₂O. The ionic conductivity of CaZr_0.8Y_0.2O_3-δ in 6 M KOH solution is around 0.1 S cm⁻¹ at 90 °C, 100 times higher than that in pure water, indicating increased OH⁻ ionic conductivity with a higher concentration of feed OH⁻ ions. Density functional theory calculations suggest the diffusion of OH⁻ ions relies on oxygen vacancies and temporarily formed hydrogen bonds. This opens a window to discovering new ceramic ionic conducting materials for near ambient temperature fuel cells, electrolysers and other electrochemical devices.

This work experimentally implements a physical reservoir computing system using a back-end-of-line SiC thin film based memristor to achieve pattern recognition with high accuracy.

Oxygen octahedral rotations are the most common phase transitions in perovskite crystal structures. Here we show that the color symmetry of such pure elastic distortions is isomorphic to magnetic point groups, which allows their probing through distinguishing polar versus magnetic symmetry. We demonstrate this isomorphism using nonlinear optical probing of the octahedral rotational transition in a compressively strained ${\mathrm{SrTiO}}_3$ thin film that exhibits ferroelectric ($4mm$) and antiferrodistortive ($4^{\prime }m{m}^{\prime }$) phases evolving through independent phase transitions. The approach has broader applicability for probing materials with lattice rotations that can be mapped to color groups.