The creation of a combined radiative state at 2.95–3.1 eV in the phosphor ${CaSO}_4-{Dy}_{ }^{3+}$ has been investigated using vacuum ultraviolet and thermoactivation spectroscopy methods. It is shown that the combined radiative electronic state is formed from the radiative electronic states of the impurity electronic trapping centers ${Dy}_{ }^{2+}-{ SO}_4^{-}$ and the intrinsic electronic radiative states ${SO}_4^{3-}-{SO}_4^{-}$ during the excitation of the anion complex ${SO}_4^{2-}$, as a result of charge transfer from the excited anion complex $O_{ }^{2-}-{Dy}_{ }^{3+}$ to the impurities and the neighboring anion complex $O^{2-}-{ SO}_4^{2-}$. In the ${CaSO}_4-Dy$ phosphor, the combined radiative electronic state and impurity emission of ${Dy}_{ }^{3+}$, 2.16 eV and 2.56 eV are excited by photons with energies of 3.95–4.0 eV and 4.5–4.6 eV. Energy transfer from the matrix to the ${Dy}_{ }^{3+}$ impurities is revealed upon thermal exposure as a result of the ionization of the electronic capture centers of ${Dy}^{2+}$ and ${SO}_4^{3-}$.

Spectroscopic and thermoactivation methods were used to study the processes of accumulation of electron and hole trapping centers and energy transfer of electronic excitations to impurities in ${\mathrm{C}\mathrm{a}\mathrm{S}\mathrm{O}}_4\text{-}\mathrm{M}\mathrm{n}$ and ${\mathrm{B}\mathrm{a}\mathrm{S}\mathrm{O}}_4\text{-}\mathrm{M}\mathrm{n}$. It is shown that electronic trapping centers are created during the excitation of an anionic complex as a result of charge transfer from ${\mathrm{O}}^{2-}\to {\mathrm{S}\mathrm{O}}_4^{2-}$ to closely spaced anionic complexes ${\mathrm{S}\mathrm{O}}_4^{2-}$ in ${\mathrm{C}\mathrm{a}\mathrm{S}\mathrm{O}}_4$ and ${\mathrm{B}\mathrm{a}\mathrm{S}\mathrm{O}}_4$. In ${\mathrm{C}\mathrm{a}\mathrm{S}\mathrm{O}}_4$ and ${\mathrm{B}\mathrm{a}\mathrm{S}\mathrm{O}}_4$, energy transfer from the host to impurities occurs at the moment of charge transfer from the excited anionic complex to the combined radiative electronic state at 2.95–3.1 eV. This combined state is formed from electronic trapping centers ${\mathrm{M}\mathrm{n}}^{+}\text{-}{\mathrm{S}\mathrm{O}}_4^{-}$ and ${\mathrm{S}\mathrm{O}}_4^{3-}\text{-}{\mathrm{S}\mathrm{O}}_4^{-}$. It was found that the emerging combined radiative states at 2.95–3.1 eV of sulfates, which are formed as a result of charge transfer from the excited anionic complexes to the excited state of impurities, ${\mathrm{T}\mathrm{l}}^{+},{\mathrm{C}\mathrm{u}}^{+},{\mathrm{a}\mathrm{n}\mathrm{d} \mathrm{M}\mathrm{n}}^{2+}$, occupy the same energy levels as the intrinsic electronic trapping center ${\mathrm{S}\mathrm{O}}_4^{3-}$ of the host at 2.95–3.17 eV. Experimental results show that during UV photon irradiation, anionic complexes are excited mainly near impurities in sulfates.

The mechanisms of formation of induced intrinsic and impurity radiative states, which consist of intrinsic and impurity electron–hole-trapping center states in irradiated ${Ca}_2{P}_2{O}_7-Mn$ and ${Ca}_2{P}_2{O}_7$ phosphates, were investigated using thermoactivation and vacuum-ultraviolet spectroscopy methods. These centers are excited at photon energies of 4.0 eV and 4.5 eV, which are within the matrix’s transparency region. New radiative-induced states at 3.06 eV and 2.92 eV are demonstrated to be generated upon the excitation of anions by photons with energies of 5.0 and 5.64 eV. This process is due to charge transfer from the ion to the impurities, specifically ${Mn}^{2+}(O^{2-}-{Mn}^{2+})$ and the neighboring ion $O_{ }^{2-}-(P_2{O}_7{)}^{4-}$. Furthermore, upon the excitation of matrix anions with photon energies exceeding the band gap (8.0–8.25 eV), electron-trapping by impurities such as ${Mn}^{2+}$ and $(P_2{O}_7{)}^{4-}$ ions results.

Spectroscopic methods are used to study the processes of accumulation of electron and hole trapping centers and energy transfer of electronic excitations to impurities in CaSO4-Mn and BaSO4-Mn. It is shown that the transfer of energy from the host to impurities occurs at the moment of charge transfer from the excited anionic complex SO_4^(2-) to the hybrid radiative electronic states at 2.95–3.1 eV formed from the electronic states of the Mn^(+)-SO_4^(-) and SO_4^(3-)-SO_4^(-) trapping centers. It was found that, in sulfates, under irradiation, as a result of charge transfer from excited anionic complexes of the host to the excited states of impurities Tl^(+),Cu^(+),Mn^(2+), hybrid radiative states emerge at 2.95–3.15 eV, occupying the same energy levels as the intrinsic electronic trapping center SO_4^(3-) of the host at 2.95–3.1 eV.

The mechanisms of formation of induced intrinsic and impurity radiative states, which consist of intrinsic and impurity electron-hole trapping centers in irradiated Ca2P2O7-Mn and Ca2P2O7 phosphates, were investigated using thermoactivation and vacuum-ultraviolet spectroscopy methods. These centers are excited at photon energies of 4.0 eV and 4.5 eV, which are within the matrix's transparency region. New radiative induced states at 3.06 eV and 2.92 eV are demonstrated to be generated upon the excitation of anions by photons with energies of 5.0 and 5.64 eV. This process is due to charge transfer from the ion to the impurities, specifically Mn^2+ O^2- Mn^2+ and the neighboring ion O^2- (P2O7)^4-. Furthermore, upon the excitation of matrix anions with photon energies exceeding the band gap (8.0 - 8.25 eV), electron trapping by impurities such as Mn^2+ and (P2O7)^4- ions results.

This study of the BaSO₄-Bi phosphor has revealed that the accumulated energy after external optical excitation exhibits specific characteristics. During irradiation with photon energy exceeding the bandgap, in addition to the intrinsic ultraviolet emission of the Bi³⁺ ion, several recombination emissions and emission from the Bi²⁺ ion are observed. At 80 K, the recombination luminescence states and Bi²⁺ ion emission form combined electronic states. Upon heating of the BaSO₄-Bi phosphor, these combined electronic states decay into recombination emissions at 2.34 eV, 2.4 eV, 3.1 eV, and 2.7 eV, as well as Bi²⁺ ion emission at 1.97 eV. It is assumed that the 2.34 eV, 2.4 eV, and 3.1 eV emissions are associated with the recombination of electrons released from ionized ${SO}_4^{3-}$ electron trapping centers with nonequivalently localized holes in the host lattice. The 2.7 eV emission is attributed to the decay of an exciton formed by electron–hole recombination near a Bi³⁺ ion.