We demonstrate intracavity plasmonic laser spectroscopy using a plasmonic laser created from a periodically perforated silver film with a liquid gain medium. An active zone of the laser is formed by a highly elongated spot of pumping. This results in a significantly more efficient diffusive mixing of dye molecules, which suppresses the effect of their bleaching, and in the ability to reduce the volume of the gain medium to as little as 400 nl. We use this design for a stable plasmonic laser in multiple measurements and demonstrate that it is highly effective as a spaser spectroscopy sensor for intracavity detection of an absorptive dye at 0.07 ppm. This work provides an opportunity to develop applications of intracavity plasmonic laser spectroscopy in biological label detection and other fields.

Oil production is a complex process that can be made more efficient by applying gas enhanced oil recovery (EOR) methods. Thus, it is essential to know the minimum miscibility pressure (MMP) and minimum miscibility enrichment (MME) of gas in oil. Conventional slim-tube experiments for the measurement of MMP require hundreds of millilitres of real or recombined oil and last over 30 days. Advances in microfluidic technology allow the reduction of the amount of fluid and the time required in determining MMP (or MME), hence making the process rapid. In this study, we developed a microfluidic model with a stochastically distributed pore network, porosity of 74.6% and volume of 83.26 nanolitres. Although the volume was six orders of magnitude smaller than the slim tube, it retained the same proportions, guaranteeing a proper comparison between the tests. This microfluidic chip allowed the study of the MMP of n-decane with carbon dioxide at two different temperature conditions. The experimental results coincided with the results received both from conventional and microfluidic experiments. Furthermore, a numerical simulation of a section of the microfluidic model under the experimental conditions presented results within acceptable margins of the experimental ones. The results of the presented methodology indicate the potential to replace conventional technology for the measurement of MMP with microfluidic technology. Its promise lies in accelerating laboratory tests and increasing the reliability of experimental results and, subsequently, the quality of field gas EOR operations.

During last 20 years, great results in metamaterials and plasmonic nanostructures fabrication were obtained. However, large ohmic losses in metals and mass production compatibility still represent the most serious challenge that obstruct progress in the fields of metamaterials and plasmonics. Many recent research are primarily focused on developing low-loss alternative materials, such as nitrides, II–VI semiconductor oxides, high-doped semiconductors, or two-dimensional materials. In this work, we demonstrate that our perfectly fabricated silver films can be an effective low-loss material system, as theoretically well-known. We present a fabrication technology of plasmonic and metamaterial nanodevices on transparent (quartz, mica) and non-transparent (silicon) substrates by means of e-beam lithography and ICP dry etch instead of a commonly-used focused ion beam (FIB) technology. We eliminate negative influence of litho-etch steps on silver films quality and fabricate square millimeter area devices with different topologies and perfect sub-100 nm dimensions reproducibility. Our silver non-damage fabrication scheme is tested on trial manufacture of spasers, plasmonic sensors and waveguides, metasurfaces, etc. These results can be used as a flexible device manufacture platform for a broad range of practical applications in optoelectronics, communications, photovoltaics and biotechnology.

High electron mobility transistors (HEMTs) technologies based on AlGaN/GaN and InAlN/GaN heterostructures have been developed. The research focused on influence of epitaxial growth conditions and buffer doping profiles on electrical properties HEMTs. An output power density of 4W/mm at 17 GHz was demonstrated for InAlN/GaN HEMTs and 7W/mm at 10 GHz for AlGaN/GaN HEMTs.

This work focuses on the fabrication of niobium through silicon vias (TSV) superconductors interconnects. The effect of supercycle of sequential oxidation and chemical etching process on the through-etch wall quality was investigated. It was experimentally shown that the use of supercycle in the fabrication process leads to significant improvement of the TSV wall quality and removal of the defect type—scallops. After 12 times repetitions of supercycles a dissipative bonding of superconducting strips on the front and back side of the sample is observed. The critical current density of such coupling is 5 × 10⁴ A cm⁻². The critical ratio of substrate thickness to hole diameter at which electrical coupling is formed is 3:1.