The performance of the real-time dynamic force and torque compensation, flexible force interactive control, and the ability to compensate for the defect of the passive rehabilitation training are the important functions within the rehabilitation robot design process. In this investigation, the upper limb rehabilitation robot is designed, and the force sensor is used to measure the joint feedback torque with high precision, high sensitivity, and low cost. In the rehabilitation robot design process, the human–machine adaptability and lightweight flexible driving design are considered, and the static and dynamic moment detection performances of the driving joint are analyzed. Furthermore, the impedance control algorithm is used to control the force output of the single drive joint, and then the sinusoidal force output performance and step force output performance are tested under different amplitudes and frequencies. Finally, the passive rehabilitation mode of the prototype is tested to evaluate the performance of the rehabilitation robot. The results show that the force output accuracy and stability of the driving joint has a good performance, which can satisfy the force-assisted application of exoskeleton.

The key of heterostructure is the combinations created by stacking various vdW materials, which can modify interlayer coupling and electronic properties, providing exciting opportunities for designer devices. However, this simple stacking does not create chemical bonds, making it difficult to fundamentally alter the electronic structure. Here, we demonstrate that interlayer interactions in heterostructures can be fundamentally controlled using hydrostatic pressure, providing a bonding method to modify electronic structures. By covering graphene with boron nitride and inducing an irreversible phase transition, the conditions for graphene lattice-matching bonding (IMB) were created. We demonstrate that the increased bandgap of graphene under pressure is well maintained in ambient due to the IMB in the interface. Comparison to theoretical modeling emphasizes the process of pressure-induced interfacial bonding, systematically generalizes, and predicts this model. Our results demonstrate that pressure can irreversibly control interlayer bonding, providing opportunities for high-pressure technology in ambient applications and IMB engineering in heterostructures.

Graphene-TMD heterojunctions with strong electron–phonon coupling are expected in nano-photodetectors, yet the chemical doping hinders the performance of graphene, and the limited photoelectric conversion and lack of effective regulation of interlayer interactions hinder further research on heterostructures. Here, we investigate the effect of hydrostatic pressure on vertically stacked monolayer-graphene and monolayer-WS₂ heterostructures, and the phonon pattern in the vertical direction is significantly enhanced during compression, indicating that the interlayer electron transition dominates. We further analyze the pressure evolution of doping concentration and Fano scattering, showing the three stages of charge transfer and the significant effect of pressure on the strength of electron–phonon coupling, which provide a platform for regulating the physical properties of quantum interference between electrons and phonons. Finally, density functional theory (DFT) calculations confirm the strong p-type doping in graphene and pressure-induced transitions in heterojunction band structures. These findings suggest that graphene-based heterobilayers are promising candidates for future optoelectronic applications.

Fiber-optic Fabry-Perot interference (FPI) sensors offer remarkable advantages in sensing applications, particularly in harsh environments, while errors from measurement and demodulation can deteriorate the sensing precision. To better understand the error origin, a systematic error model based on First Principles is established, including random and bias errors. An optimized cavity length demodulation (CLD) method, based on the neglected imperfect incidence spectrum, is proposed for cavity length extraction and spectrum decomposition. Demodulation experiments with a fixed cavity length were conducted on the graphene fiber-optic FPI sensor. The validity of the error model and optimized CLD method was verified. The random error mainly originates from the random wander of interference peak around the resolution of the spectrum analyzer, while the bias error mainly originates from the imperfect incidence spectrum. The graphene FPI sensor and optimized CLD method were applied to pressure sensing. The bias error was effectively eliminated and the achieved random error was 20 times lower than that of the P-P method. These findings in this paper may provide valuable insights and solutions for the FPI sensor applications.

In the face of the urgent need for ultra-sensitive detection in the new generation of complex photoelectric environment, traditional silicon-based detectors cannot achieve high-sensitivity detection in micro-size and extreme environments. Carbon-based materials are expected to achieve high-sensitivity detection in complex environments due to their high electron mobility and temperature stability. Based on the above problems, this paper studies the photoelectric working mechanism by analyzing the photoelectron distribution of carbon-based detectors. Subsequently, it was verified by experiments. The graphene band gap was opened under high pressure conditions (6.4 Gpa), and in-situ detection was carried out by Raman and ultraviolet absorption spectra. Thereafter, a stable wide band gap carbon-based semiconductor photodetector was successfully fabricated. Eventually, its photoelectric detection performance was tested under various temperature conditions (420–80 K). This process confirmed the operational stability of the carbon-based photodetector in extreme temperature environments and provided a valuable reference for the development of a new generation of detectors suitable for extreme conditions.

The new generation of detection equipment urgently requires high-sensitivity detectors. Traditional silicon-based detectors cannot meet the requirements for sensitivity and channel size. Diamondene has excellent performance such as high carrier mobility and wide band gap. Its excellent electronic characteristics are expected to effectively improve the sensitivity of the detector and provide a new way for developing the next generation of detectors. However, the detection mechanism based on diamondene is still unclear. Based on the above problems, the analytical model and mechanism of the transistor channel are first studied. By analyzing the relationship between the surface potential distribution of the current channel and the effective channel size in the working state and the sensitive characteristics of the two-dimensional material electrons of the channel, a theoretical model of the transistor detector is constructed based on the electronic characteristics of the channel material, and the working characteristics of the detector are investigated. The finite element simulation of the working mechanism, potential and electron distribution of the transistor detector is carried out. The simulation results show that the mobility level of the diamondene-based detector is 2.5 times that of the traditional silicon-based detector, which theoretically verifies the hypersensitive detection characteristics of the diamondene-based detector. This study is of great significance in designing and applying a new generation of carbon-based ultra-sensitive detection devices.