Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies, as well as veiled dielectric-responsive character, are instrumental in electromagnetic dissipation. Conventional methods, however, constrain their delicate constructions. Herein, an innovative alternative is proposed: carrageenan-assistant cations-regulated (CACR) strategy, which induces a series of sulfides nanoparticles rooted in situ on the surface of carbon matrix. This unique configuration originates from strategic vacancy formation energy of sulfides and strong sulfides-carbon support interaction, benefiting the delicate construction of defects-rich heterostructures in M_xS_y/carbon composites (M-CAs). Impressively, these generated sulfur vacancies are firstly found to strengthen electron accumulation/consumption ability at heterointerfaces and, simultaneously, induct local asymmetry of electronic structure to evoke large dipole moment, ultimately leading to polarization coupling, i.e., defect-type interfacial polarization. Such “Janus effect” (Janus effect means versatility, as in the Greek two-headed Janus) of interfacial sulfur vacancies is intuitively confirmed by both theoretical and experimental investigations for the first time. Consequently, the sulfur vacancies-rich heterostructured Co/Ni-CAs displays broad absorption bandwidth of 6.76 GHz at only 1.8 mm, compared to sulfur vacancies-free CAs without any dielectric response. Harnessing defects-rich heterostructures, this one-pot CACR strategy may steer the design and development of advanced nanomaterials, boosting functionality across diverse application domains beyond electromagnetic response.

Graphene is renowned for its excellent chemical, thermal, mechanical, electrical, and optical properties, which arise from its unique bonding structure. However, graphene is intrinsically a zero-bandgap material, limiting its development in the field of flexible nanoelectronics. To expand the range of applications for graphene in electronic devices, it is crucial to develop the strategies for inducing a bandgap. One of the most effective methods is chemical doping. Doping not only alters the electronic properties of graphene by modifying its inherent gapless nature but also engenders new materials with distinctive and potentially synergistic characteristics. Although there are many reviews on the doped graphene, there is a rare one to discuss the role of doping in enhancing the performance of graphene-based semiconductors. This paper reviews various doping types and their impacts on graphene, emphasizing the effects of boron (B) doping, nitrogen (N) doping, oxygen-group doping, other non-metallic atom or atomic pair doping, and metallic doping. We will further discuss how these dopants affect the geometry, electronic structure, and mechanical properties of graphene. It is expected to be meaningful for further understanding the nature of doped graphene and building new graphene-like structures.

Ultrafine Pt nanoparticles were successfully anchored on a polyimide-based covalent triazine framework for the selective hydrogenation of halogenated nitrobenzenes and tandem hydrogenation-coupling reaction to halogenated secondary amines.