In this study, the nanoimprint lithography (NIL) technique used to fabricate III–V compound nanowires was investigated. A silicon mold and thermoplastic polymer mr-I 7010R were used for hot embossing nanoimprint lithography. The mold was patterned by e-beam lithography with two masks exposed with different dosages to reduce the proximity effect. The filling capability and residual layer thickness of the thermoplastic polymer were optimized at the embossing temperature of 125 °C. A 73 nm GaAs nanowire was obtained by the mold coated with an antisticking layer.

The development of good-conductivity p-type β-Ga₂O₃ is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga₂O₃ films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN in a N₂O atmosphere. To obtain insights into the underlying mechanism of the thermally activated transformation process, additional measurements of the oxidized films were performed at temperatures of 1000, 1050, and 1100 °C. Room-temperature photoluminescence (PL) spectra showed a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of approximately 5.0 eV. The characteristics of polycrystalline and anisotropic growth were confirmed via normalized X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) patterns. The amount of incorporated nitrogen was analyzed via secondary ion mass spectrometry (SIMS) to examine the effects of oxidation temperature. Furthermore, the ionization energy of the acceptor in the films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using temperature-dependent Hall test results. The results indicated that nitrogen doping played a significant role in determining p-type electrical properties. The activation energy of polycrystalline β-Ga₂O₃, prepared via the thermal oxidation of GaN in the N₂O atmosphere, was estimated to be 147.175 kJ·mol⁻¹ using an Arrhenius plot. This value was significantly lower than that obtained via both the dry and wet oxidation of GaN under O₂ ambient conditions, thus confirming the higher efficiency of the thermal oxidation of GaN in a N₂O atmosphere.

Ammonium hexafluorotitanate and boric acid aqueous solutions were used as precursors for the growth of titanium oxide films on indium tin oxide (ITO)/glass substrate. For as-grown titanium oxide film used in an electrochromic device, Li⁺ ions from electrolyte will be trapped to hydroxyl groups and degrade the electrochromic durability during the cyclic voltammogram characterization. For niobium doped titanium oxide film, lower growth rate from more HF incorporation from the niobium doped solution and rougher surface morphology from the formation of nanocrystals were obtained. However, niobium doping reduces hydroxyl groups and the electrochromic durability is enhanced from 5 × 10³ to 1 × 10⁴ times. The transmittance is enhanced from 37 to 51% at the wavelength of 550 nm.