ZnO nanorods (NRs) arrays doped with a large concentration of Mn synthesized by aqueous chemical growth and were characterized by SEM, photoluminescence, Raman scattering, magnetic force microscopy (MFM). By comparison of spectra taken on pure and Mn-doped ZnO NRs, a few new Raman impurity-related phonon modes, resulting from the presence of Mn in the investigated samples. We also present a vibrational and magnetic characterization of individual lying nanorods using Raman and MFM imaging. Confocal scanning micro-Raman mapping of the spatial distribution of intensity and frequency of phonon modes in single Mn-doped ZnO NRs nanorods is presented and analyzed for the first time. Mn-related local vibrational modes are also registered in Raman spectra of the single nanorod, confirming the incorporation of Mn into the ZnO host matrix. At higher Mn concentration the structural transformation toward the spinel phase ZnMn2O4 and Mn3O4 is observed mainly in 2D bottom layers. MFM images of Mn-doped ZnO NR arrays and single nanorod were studied in nanoscale at room temperature and demonstrate magnetic behavior. The circular domain magnetic pattern on top of single nanorod originated to superposition of some separate domains inside rod. This demonstrates that long-range ferromagnetic order is present at room temperature. Aligned Mn-doped ZnO NRs demonstrates that long-range ferromagnetic order and may be applied to future spintronic applications.

In this paper, we investigate the structural properties of AlGaN/GaN heterostructures grown by metal organic chemical vapor deposition on sapphire substrates with different thicknesses using high-resolution x-ray diffraction and Raman scattering methods. We discuss the microscopic nature of spatial-inhomogeneous deformations and dislocation density in the structures. Microdeformations within mosaic blocks and the sizes of regions of coherent diffraction are determined. We reveal a gradient depth distribution of deformations in the mosaic structure of nitride layers, as well as at the interface regions of the sapphire substrate on the microscale level using confocal micro-Raman spectroscopy. We determine that an increase in substrate thickness leads to a reduction in dislocation density in the layers and an increase in the elastic deformations. The features of the block structure of nitrides layers are shown to have a significant influence on their elastic properties.

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.