Conventional electronic devices generally utilize only the charge of conduction electrons; however, interest is growing in ‘spin-electronic’ devices¹, whose operation depends additionally on the electronic spin. Spin-polarized electrons (which occur naturally in ferromagnetic materials) can be injected from a ferromagnet into non-ferromagnetic materials^2,3,4, or through oxide tunnel barriers^{3,5,6,7,8,9,10}. The electron-scattering rate at any subsequent ferromagnetic/non-ferromagnetic interface depends on the spin polarity, a property that is exploited in spin-electronic devices. The unusual conducting properties^{11,12,13,14,15,16,17,18} of carbon nanotubes offer intriguing possibilities for such devices; their elastic- and phase-scattering lengths are extremely long^16,17, and carbon nanotubes can behave as one-dimensional conductors¹⁸. Here we report the injection of spin-polarized electrons from ferromagnetic contacts into multi-walled carbon nanotubes, finding direct evidence for coherent transport of electron spins. We observe a hysteretic magnetoresistance in several nanotubes with a maximum resistance change of 9%, from which we estimate the spin-flip scattering length to be at least 130 nm—an encouraging result for the development of practical nanotube spin-electronic devices.

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.

We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS₂ flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform a combined experimental and theoretical study on atomically thin MoS₂ field effect transistors with varying the number of MoS₂ layers (NLs). Experimentally, an intimate μ–NL relation is observed with a 10-fold degradation in μ for extremely thinned monolayer channels. To accurately describe the carrier scattering process and shed light on the origin of the thinning-induced mobility degradation, a generalized Coulomb scattering model is developed with strictly considering device configurative conditions, that is, asymmetric dielectric environments and lopsided carrier distribution. We reveal that the carrier scattering from interfacial Coulomb impurities (e.g., chemical residues, gaseous adsorbates, and surface dangling bonds) is greatly intensified in extremely thinned channels, resulting from shortened interaction distance between impurities and carriers. Such a pronounced factor may surpass lattice phonons and serve as dominant scatterers. This understanding offers new insight into the thickness induced scattering intensity, highlights the critical role of surface quality in electrical transport, and would lead to rational performance improvement strategies for future atomic electronics.