India is one of the leading nations in the world for the development and utilization of wind energy. The country’s wind power potential at 100 m above ground level is 302 GW. The Indian wind industry is on track to achieve the government’s 60 GW wind capacity target ahead of the 2022 deadline as it has already crossed 34 GW. Wind energy sector contributes to the country by generating employment, reducing the adverse effects of greenhouse gases and increasing the size of gross domestic product. To date, the Indian wind sector has developed by private sector investment. The government, on its part, supporting the wind industry in the country via a range of financial incentives and innovative schemes. That ensures scaling up of wind energy to reach the national energy demand in a socially, economically and ecologically sustainable manner. Attempts have been made in this review to frame a clear picture of the current status of India in the onshore and offshore sectors. Various guidelines for the development of wind power projects, policies and programmes by the ministry and its growing concern for the country’s energy security are discussed. This paper also highlights the importance of wind energy tariff and also explores the cost and economics of wind energy production. Current wind energy-related research studies are summarized. Concerns that are adhered in developing wind energy power plants including social, environmental and techno-economic impacts are addressed.

Knowledge of materials' thermal‐transport properties, conductivity and diffusivity, is crucial for several applications within areas of biology, material science and engineering. Specifically, a microsized, flexible, biologically integrated thermal transport sensor is beneficial to a plethora of applications, ranging across plants physiological ecology and thermal imaging and treatment of cancerous cells, to thermal dissipation in flexible semiconductors and thermoelectrics. Living cells pose extra challenges, due to their small volumes and irregular curvilinear shapes. Here a novel approach of simultaneously measuring thermal conductivity and diffusivity of different materials and its applicability to single cells is demonstrated. This technique is based on increasing phonon‐boundary‐scattering rate in nanomembranes, having extremely low flexural rigidities, to induce a considerable spectral dependence of the bandgap‐emission over excitation‐laser intensity. It is demonstrated that once in contact with organic or inorganic materials, the nanomembranes' emission spectrally shift based on the material's thermal diffusivity and conductivity. This NM‐based technique is further applied to differentiate between different types and subtypes of cancer cells, based on their thermal‐transport properties. It is anticipated that this novel technique to enable an efficient single‐cell thermal targeting, allow better modeling of cellular thermal distribution and enable novel diagnostic techniques based on variations of single‐cell thermal‐transport properties.

By choice of appropriate growth conditions and optimization of the strain interactions between two closely stacked InAs/GaAs quantum dot (QD) layers, the emission wavelength of the QDs can be significantly extended, giving room-temperature emission from highly uniform QD ensembles in excess of 1500 nm. These QD bilayers are incorporated into edge-emitting laser structures and room-temperature ground-state lasing at 1420 nm and electroluminescence at 1515 nm are observed. Under high-bias conditions, asymmetric broadening of peaks in the laser gain spectra are observed, extending positive net modal gain from the devices to beyond 1500 nm, and the origin of this broadening is discussed.

The fabrication of orange‐emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm ⁻² and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.